Raman scattering study of vibrational modes and hole concentration in gaxmn1-xsb
文献类型：期刊论文
| 作者 | Islam, M. R.1; Hasan, M. M.1; Chen, N.2; Fukuzawa, M.3; Yamada, M.3 |
| 刊名 | Semiconductor science and technology
 |
| 出版日期 | 2010-09-01 |
| 卷号 | 25期号:9页码:8 |
| ISSN号 | 0268-1242 |
| DOI | 10.1088/0268-1242/25/9/095010 |
| 通讯作者 | Islam, m. r.(islambit@yahoo.com) |
| 英文摘要 | The raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor ga1-xmnxsb grown by mn ion implantation, deposition and post-annealing has been presented. the experiments are performed both in implanted and unimplanted regions before and after etching the samples. the raman spectra measured from the unimplanted region show only gasb-like phonon modes. on the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). the experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to mn ion implantation, deposition and annealing processes. furthermore, we have determined the hole concentration as a function of laser probing position by modeling the raman spectra using coupled mode theory. the contributions of gasb-like phonon modes and coupled lo-phonon plasmon mode are taken into consideration in the model. the hole-concentration-dependent clopm is resolved in the spectra measured from the implanted and nearby implanted regions. the hole concentrations determined by raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique. |
| WOS关键词 | DILUTED MAGNETIC SEMICONDUCTORS ; PHONON ; FERROMAGNETISM ; TEMPERATURE ; GA1-XMNXAS ; SPECTRA ; STRAIN ; LAYERS ; GAAS ; SPIN |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000281221200011 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428072 |
| 专题 | 半导体研究所 |
| 通讯作者 | Islam, M. R. |
| 作者单位 | 1.Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 9203, Bangladesh 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Kyoto Inst Technol, Dept Elect, Kyoto 6068585, Japan |
| 推荐引用方式 GB/T 7714 | Islam, M. R.,Hasan, M. M.,Chen, N.,et al. Raman scattering study of vibrational modes and hole concentration in gaxmn1-xsb[J]. Semiconductor science and technology,2010,25(9):8. |
| APA | Islam, M. R.,Hasan, M. M.,Chen, N.,Fukuzawa, M.,&Yamada, M..(2010).Raman scattering study of vibrational modes and hole concentration in gaxmn1-xsb.Semiconductor science and technology,25(9),8. |
| MLA | Islam, M. R.,et al."Raman scattering study of vibrational modes and hole concentration in gaxmn1-xsb".Semiconductor science and technology 25.9(2010):8. |
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来源：半导体研究所
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