High-saturation-power and high-speed ge-on-soi p-i-n photodetectors
文献类型：期刊论文
| 作者 | Xue, Hai-Yun; Xue, Chun-Lai; Cheng, Bu-Wen; Yu, Yu-De; Wang, Qi-Ming |
| 刊名 | Ieee electron device letters
 |
| 出版日期 | 2010-07-01 |
| 卷号 | 31期号:7页码:701-703 |
| 关键词 | Germanium Photodetectors Saturation power Silicon-on-insulator (soi) technology Ultrahigh-vacuum chemical vapor deposition (uhv/cvd) |
| ISSN号 | 0741-3106 |
| DOI | 10.1109/led.2010.2048997 |
| 通讯作者 | Xue, hai-yun(xuehy@semi.ac.cn) |
| 英文摘要 | Ge-on-silicon-on-insulator p-i-n photodetectors were fabricated using an ultralow-temperature ge buffer by ultrahigh-vacuum chemical vapor deposition. for a detector of 70-mu m diameter, the 1-db small-signal compression power was about 110.5 mw. the 3-db bandwidth at 3-v reverse bias was 13.4 ghz. |
| WOS关键词 | SI ; PHOTODIODES ; BANDWIDTH ; GHZ |
| WOS研究方向 | Engineering |
| WOS类目 | Engineering, Electrical & Electronic |
| 语种 | 英语 |
| WOS记录号 | WOS:000281833100023 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428075 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Hai-Yun |
| 作者单位 | Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xue, Hai-Yun,Xue, Chun-Lai,Cheng, Bu-Wen,et al. High-saturation-power and high-speed ge-on-soi p-i-n photodetectors[J]. Ieee electron device letters,2010,31(7):701-703. |
| APA | Xue, Hai-Yun,Xue, Chun-Lai,Cheng, Bu-Wen,Yu, Yu-De,&Wang, Qi-Ming.(2010).High-saturation-power and high-speed ge-on-soi p-i-n photodetectors.Ieee electron device letters,31(7),701-703. |
| MLA | Xue, Hai-Yun,et al."High-saturation-power and high-speed ge-on-soi p-i-n photodetectors".Ieee electron device letters 31.7(2010):701-703. |
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来源：半导体研究所
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