Microphotoluminescence investigation of inas quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure
文献类型：期刊论文
| 作者 | Ding, Y.1; Fan, W. J.1; Ma, B. S.1; Xu, D. W.1; Yoon, S. F.1; Liang, S.2; Zhao, L. J.2; Wasiak, M.3; Czyszanowski, T.3; Nakwaski, W.3 |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2010-10-01 |
| 卷号 | 108期号:7页码:5 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.3490236 |
| 通讯作者 | Ding, y.(yding@ntu.edu.sg) |
| 英文摘要 | Microphotoluminescence (mu-pl) investigation has been performed at room temperature on inas quantum dot (qd) vertical cavity surface emitting laser (vcsel) structure in order to characterize the qd epitaxial structure which was designed for 1.3 mu m wave band emission. actual and precise qd emission spectra including distinct ground state (gs) and excited state (es) transition peaks are obtained by an edge-excitation and edge-emission (eeee) mu-pl configuration. conventional photoluminescence methods for qd-vcsels structure analysis are compared and discussed, which indicate the eeee mu-pl is a useful tool to determine the optical features of the qd active region in an as-grown vcsel structure. some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. after adjustment of epitaxial growth according to eeee mu-pl measurement results, qd-vcsel structure wafer with qd gs transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained. (c) 2010 american institute of physics. [doi:10.1063/1.3490236] |
| WOS关键词 | VAPOR-PHASE EPITAXY ; PHOTOVOLTAGE SPECTROSCOPY ; PHOTOLUMINESCENCE ; MODES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000283222200012 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428082 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ding, Y. |
| 作者单位 | 1.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Tech Univ Lodz, Inst Phys, PL-90924 Lodz, Poland |
| 推荐引用方式 GB/T 7714 | Ding, Y.,Fan, W. J.,Ma, B. S.,et al. Microphotoluminescence investigation of inas quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure[J]. Journal of applied physics,2010,108(7):5. |
| APA | Ding, Y..,Fan, W. J..,Ma, B. S..,Xu, D. W..,Yoon, S. F..,...&Nakwaski, W..(2010).Microphotoluminescence investigation of inas quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure.Journal of applied physics,108(7),5. |
| MLA | Ding, Y.,et al."Microphotoluminescence investigation of inas quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure".Journal of applied physics 108.7(2010):5. |
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