Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators
文献类型:期刊论文
作者 | Zhang Yun-Xiao; Liao Zai-Yi; Zhao Ling-Juan; Pan Jiao-Qing; Zhu Hong-Liang; Wang Wei |
刊名 | Chinese physics b
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出版日期 | 2010-07-01 |
卷号 | 19期号:7页码:5 |
关键词 | Electroabsorption modulator Intra-step quantum wells Uni-traveling-carrier rf-gain |
ISSN号 | 1674-1056 |
通讯作者 | Zhang yun-xiao(zhangyx@semi.ac.cn) |
英文摘要 | We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (ec-utc-pds) and intra-step quantum well electroabsorption modulators (iqw-eams) on n-inp substrates. these devices exhibit simultaneously 2.1 ghz and -16.2 db rf-gain at 21 ghz with a 450 omega thin-film resistor and a bypass capacitor integrated on a chip. |
WOS关键词 | WAVELENGTH CONVERSION ; WAVE-GUIDE |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000280186500052 |
出版者 | IOP PUBLISHING LTD |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428084 |
专题 | 半导体研究所 |
通讯作者 | Zhang Yun-Xiao |
作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang Yun-Xiao,Liao Zai-Yi,Zhao Ling-Juan,et al. Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators[J]. Chinese physics b,2010,19(7):5. |
APA | Zhang Yun-Xiao,Liao Zai-Yi,Zhao Ling-Juan,Pan Jiao-Qing,Zhu Hong-Liang,&Wang Wei.(2010).Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators.Chinese physics b,19(7),5. |
MLA | Zhang Yun-Xiao,et al."Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators".Chinese physics b 19.7(2010):5. |
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来源:半导体研究所
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