Molecular beam epitaxy of gasb on gaas substrates with alsb/gasb compound buffer layers
文献类型：期刊论文
| 作者 | Hao, Ruiting1,2; Deng, Shukang1; Shen, Lanxian1; Yang, Peizhi1; Tu, Jielei1; Liao, Hua1; Xu, Yingqiang2; Niu, Zhichuan2 |
| 刊名 | Thin solid films
 |
| 出版日期 | 2010-10-29 |
| 卷号 | 519期号:1页码:228-230 |
| 关键词 | Gallium arsenide Gallium antimonide Gallium antimonide/aluminum antimonide Superlattices Molecular beam epitaxy |
| ISSN号 | 0040-6090 |
| DOI | 10.1016/j.tsf.2010.08.001 |
| 通讯作者 | Hao, ruiting(ruitinghao@semi.ac.cn) |
| 英文摘要 | Gasb films with alsb/gasb compound buffer layers were grown by molecular beam epitaxy on gaas (001) substrates. the crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (pl), respectively. it was found that the alsb/gasb compound buffer layers can restrict the dislocations into gasb epilayers. the intensity of pl spectra of gasb layer becomes large with the increasing the periods of alsb/gasb superlattices, indicating that the optical quality of gasb films is improved. (c) 2010 elsevier b.v. all rights reserved. |
| WOS关键词 | VAPOR-PHASE EPITAXY ; SURFACE-MORPHOLOGY ; GROWTH ; SUPERLATTICES ; TEMPERATURE ; RELAXATION ; DETECTORS ; GAAS(001) ; MOCVD ; FILMS |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000283955200040 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428087 |
| 专题 | 半导体研究所 |
| 通讯作者 | Hao, Ruiting |
| 作者单位 | 1.Yunnan Normal Univ, Inst Solar Energy, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Yunnan Province, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hao, Ruiting,Deng, Shukang,Shen, Lanxian,et al. Molecular beam epitaxy of gasb on gaas substrates with alsb/gasb compound buffer layers[J]. Thin solid films,2010,519(1):228-230. |
| APA | Hao, Ruiting.,Deng, Shukang.,Shen, Lanxian.,Yang, Peizhi.,Tu, Jielei.,...&Niu, Zhichuan.(2010).Molecular beam epitaxy of gasb on gaas substrates with alsb/gasb compound buffer layers.Thin solid films,519(1),228-230. |
| MLA | Hao, Ruiting,et al."Molecular beam epitaxy of gasb on gaas substrates with alsb/gasb compound buffer layers".Thin solid films 519.1(2010):228-230. |
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来源：半导体研究所
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