Catalytic activation of mg-doped gan by hydrogen desorption using different metal thin layers
文献类型：期刊论文
| 作者 | Wei, Tongbo; Wang, Junxi; Liu, Naixin; Lu, Hongxi; Zeng, Yiping; Wang, Guohong; Li, Jinmin |
| 刊名 | Japanese journal of applied physics
 |
| 出版日期 | 2010 |
| 卷号 | 49期号:10页码:3 |
| ISSN号 | 0021-4922 |
| DOI | 10.1143/jjap.49.100201 |
| 通讯作者 | Wei, tongbo(tbwei@semi.ac.cn) |
| 英文摘要 | The annealing of mg-doped gan with pt and mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. compared with the ni and mo catalysts, pt showed good activation effect for hydrogen desorption and ohmic contact to the ni/au electrode. despite the weak hydrogen desorption, mo did not diffuse into the gan epilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to ni and pt depositions, which resulted in the high activation of mg acceptors. for the gan activated with the ni, pt, and mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of gan without metal. (c) 2010 the japan society of applied physics |
| WOS关键词 | LOW-TEMPERATURE ACTIVATION ; FILMS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | JAPAN SOC APPLIED PHYSICS |
| WOS记录号 | WOS:000283142900002 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428097 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, Tongbo |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, Tongbo,Wang, Junxi,Liu, Naixin,et al. Catalytic activation of mg-doped gan by hydrogen desorption using different metal thin layers[J]. Japanese journal of applied physics,2010,49(10):3. |
| APA | Wei, Tongbo.,Wang, Junxi.,Liu, Naixin.,Lu, Hongxi.,Zeng, Yiping.,...&Li, Jinmin.(2010).Catalytic activation of mg-doped gan by hydrogen desorption using different metal thin layers.Japanese journal of applied physics,49(10),3. |
| MLA | Wei, Tongbo,et al."Catalytic activation of mg-doped gan by hydrogen desorption using different metal thin layers".Japanese journal of applied physics 49.10(2010):3. |
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来源：半导体研究所
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