Strain-induced anticrossing of bright exciton levels in single self-assembled gaas/alxga1-xas and inxga1-xas/gaas quantum dots
文献类型：期刊论文
| 作者 | Plumhof, J. D.1; Krapek, V.2; Ding, F.1,3; Joens, K. D.4; Hafenbrak, R.4; Klenovsky, P.2; Herklotz, A.5; Doerr, K.5; Michler, P.4; Rastelli, A.1 |
| 刊名 | Physical review b
 |
| 出版日期 | 2011-03-09 |
| 卷号 | 83期号:12页码:4 |
| ISSN号 | 1098-0121 |
| DOI | 10.1103/physrevb.83.121302 |
| 通讯作者 | Plumhof, j. d.(j.d.plumhof@ifw-dresden.de) |
| 英文摘要 | We study the effect of elastic anisotropic biaxial strain, induced by a piezoelectric actuator, on the light emitted by neutral excitons confined in different kinds of epitaxial quantum dots. we find that the light polarization rotates by up to similar to 80 degrees and the fine structure splitting (fss) varies nonmonotonically by several tens of mu ev as the strain is varied. these findings provide the experimental proof of a recently predicted strain-induced anticrossing of the bright states of neutral excitons in quantum dots. calculations on model dots qualitatively reproduce the observations and suggest that the minimum reachable fss critically depends on the orientation of the strain axis relative to the dot elongation. |
| WOS关键词 | ENTANGLED PHOTON PAIRS ; SEMICONDUCTOR ; SPIN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000288160300001 |
| 出版者 | AMER PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428104 |
| 专题 | 半导体研究所 |
| 通讯作者 | Plumhof, J. D. |
| 作者单位 | 1.IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany 2.Masaryk Univ, Inst Condensed Matter Phys, CZ-61137 Brno, Czech Republic 3.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 4.Univ Stuttgart, Inst Halbleiteropt & Funkt Grenzflachen, D-70569 Stuttgart, Germany 5.IFW Dresden, Inst Metall Mat, D-01069 Dresden, Germany |
| 推荐引用方式 GB/T 7714 | Plumhof, J. D.,Krapek, V.,Ding, F.,et al. Strain-induced anticrossing of bright exciton levels in single self-assembled gaas/alxga1-xas and inxga1-xas/gaas quantum dots[J]. Physical review b,2011,83(12):4. |
| APA | Plumhof, J. D..,Krapek, V..,Ding, F..,Joens, K. D..,Hafenbrak, R..,...&Schmidt, O. G..(2011).Strain-induced anticrossing of bright exciton levels in single self-assembled gaas/alxga1-xas and inxga1-xas/gaas quantum dots.Physical review b,83(12),4. |
| MLA | Plumhof, J. D.,et al."Strain-induced anticrossing of bright exciton levels in single self-assembled gaas/alxga1-xas and inxga1-xas/gaas quantum dots".Physical review b 83.12(2011):4. |
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来源：半导体研究所
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