1.3-mu m in(ga)as quantum-dot vcsels fabricated by dielectric-free approach with surface-relief process
文献类型：期刊论文
| 作者 | Xu, D. W.1; Yoon, S. F.1; Ding, Y.1; Tong, C. Z.1; Fan, W. J.1; Zhao, L. J.2 |
| 刊名 | Ieee photonics technology letters
 |
| 出版日期 | 2011-01-15 |
| 卷号 | 23期号:2页码:91-93 |
| ISSN号 | 1041-1135 |
| 关键词 | Dielectric-free approach Quantum dot (qd) Surface-relief technique Vertical-cavity surface-emitting lasers (vcsels) |
| DOI | 10.1109/lpt.2010.2091269 |
| 通讯作者 | Xu, d. w.(n060085@ntu.edu.sg) |
| 英文摘要 | We present the 1.3-mu m in(ga) as quantum-dot (qd) vertical-cavity surface-emitting lasers (vcsels) fabricated by the dielectric-free (df) approach with the surface-relief (sr) process. compared with the conventional dielectric-dependent (dd) method, the lower differential resistance and improved output power have been achieved by the df approach. with the same oxide aperture area, the differential resistance is reduced by 36.47% and output power is improved by 78.32% under continuous-wave operation; it is up to 3.42 mw under pulsed operation with oxide aperture diameter similar to 15 mu m. the surface-relief technique is also applied, for the first time, in 1.3-mu m qd vcsels, and it effectively enhances the emission of the fundamental mode. the characteristic of small signal modulation response is also analyzed. |
| WOS关键词 | EMITTING LASERS |
| WOS研究方向 | Engineering ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| WOS记录号 | WOS:000285843300009 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428123 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, D. W. |
| 作者单位 | 1.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, D. W.,Yoon, S. F.,Ding, Y.,et al. 1.3-mu m in(ga)as quantum-dot vcsels fabricated by dielectric-free approach with surface-relief process[J]. Ieee photonics technology letters,2011,23(2):91-93. |
| APA | Xu, D. W.,Yoon, S. F.,Ding, Y.,Tong, C. Z.,Fan, W. J.,&Zhao, L. J..(2011).1.3-mu m in(ga)as quantum-dot vcsels fabricated by dielectric-free approach with surface-relief process.Ieee photonics technology letters,23(2),91-93. |
| MLA | Xu, D. W.,et al."1.3-mu m in(ga)as quantum-dot vcsels fabricated by dielectric-free approach with surface-relief process".Ieee photonics technology letters 23.2(2011):91-93. |
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来源：半导体研究所
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