Electrical transport properties of the si-doped cubic boron nitride thin films prepared by in situ cosputtering
文献类型：期刊论文
| 作者 | Ying, J.; Zhang, X. W.; Yin, Z. G.; Tan, H. R.; Zhang, S. G.; Fan, Y. M. |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2011-01-15 |
| 卷号 | 109期号:2页码:5 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.3544065 |
| 通讯作者 | Zhang, x. w.(xwzhang@semi.ac.cn) |
| 英文摘要 | Si-doped cubic boron nitride (c-bn) films with various si concentrations were achieved by in situ cosputtering during ion beam assisted deposition. effects of the si concentration and rapid thermal annealing (rta) conditions on the electrical transport properties of si-doped c-bn thin films were investigated systematically. the results suggest that the optimum rta condition is at the temperature of 1000 degrees c for 3 min. the resistance of si-doped c-bn films gradually decreases as the si concentration increases, indicating an electrical doping effect of the si impurity. the temperature dependent electrical conductivity of the si-doped c-bn films suggests that different conduction mechanisms are dominant over the different temperature ranges. based on the davis-mott model, we propose that the extended-state conduction, band tail-state conduction and short-range hopping conduction are responsible for the respective temperature ranges. in addition, the reduction in activation energy of si impurities is observed as the si concentration increases. (c) 2011 american institute of physics. [doi: 10.1063/1.3544065] |
| WOS关键词 | HIGH-PRESSURE SYNTHESIS ; VAPOR-DEPOSITION ; NUCLEATION ; EMISSION ; DIAMOND ; GROWTH |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000286896400054 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428137 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, X. W. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ying, J.,Zhang, X. W.,Yin, Z. G.,et al. Electrical transport properties of the si-doped cubic boron nitride thin films prepared by in situ cosputtering[J]. Journal of applied physics,2011,109(2):5. |
| APA | Ying, J.,Zhang, X. W.,Yin, Z. G.,Tan, H. R.,Zhang, S. G.,&Fan, Y. M..(2011).Electrical transport properties of the si-doped cubic boron nitride thin films prepared by in situ cosputtering.Journal of applied physics,109(2),5. |
| MLA | Ying, J.,et al."Electrical transport properties of the si-doped cubic boron nitride thin films prepared by in situ cosputtering".Journal of applied physics 109.2(2011):5. |
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来源：半导体研究所
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