Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with algaas insertion layers
文献类型：期刊论文
| 作者 | Wei, Yang1; Ma, Wenquan1; Huang, Jianliang1; Zhang, Yanhua1; Huo, Yongheng1; Cui, Kai1; Chen, Lianghui1; Shi, Yanli2 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2011-03-07 |
| 卷号 | 98期号:10页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3563709 |
| 通讯作者 | Ma, wenquan(wqma@semi.ac.cn) |
| 英文摘要 | We report a modified dots-in-a-well (dwell) infrared photodetector by inserting some very thin gaas or algaas layers into the inas dots. the photoluminescence (pl) measurements indicate that the modified dwell structure with the insertion layers (ils) of gaas has a larger peak intensity and a narrower pl linewidth than that without the ils. for the modified dwell detector with algaas ils, the peak detection wavelength reaches very long infrared window of 14.1 mu m. the peak detectivity d* is 1.1 x 10(8) cm hz(1/2)/w at 77 k under normal incidence infrared irradiation. (c) 2011 american institute of physics. [doi:10.1063/1.3563709] |
| WOS关键词 | MU-M ; DETECTOR ; TEMPERATURE ; GROWTH |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000288277200078 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428138 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ma, Wenquan |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China 2.Kunming Inst Phys, Dept Basic Res & Dev, Kunming 650023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, Yang,Ma, Wenquan,Huang, Jianliang,et al. Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with algaas insertion layers[J]. Applied physics letters,2011,98(10):3. |
| APA | Wei, Yang.,Ma, Wenquan.,Huang, Jianliang.,Zhang, Yanhua.,Huo, Yongheng.,...&Shi, Yanli.(2011).Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with algaas insertion layers.Applied physics letters,98(10),3. |
| MLA | Wei, Yang,et al."Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with algaas insertion layers".Applied physics letters 98.10(2011):3. |
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来源：半导体研究所
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