Formation of rippled surface morphology during si/si (100) epitaxy by ultrahigh vacuum chemical vapour deposition
文献类型：期刊论文
| 作者 | Hu Wei-Xuan; Cheng Bu-Wen; Xue Chun-Lai; Su Shao-Jian; Wang Qi-Ming |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2011-12-01 |
| 卷号 | 20期号:12页码:7 |
| 关键词 | Step-bunching Ehrlich-chwoebel barrier Elastic repulsion Fluctuation |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/20/12/126801 |
| 通讯作者 | Cheng bu-wen(cbw@semi.ac.cn) |
| 英文摘要 | The si epitaxial films are grown on si (100) substrates using pure si(2)h(6) as a gas source using ultrahigh vacuum chemical vapour deposition technology. the values of growth temperature t(g) are 650 degrees c, 700 degrees c, 730 degrees c, 750 degrees c, and 800 degrees c. growth mode changes from island mode to step-flow mode with t(g) increasing from 650 degrees c to 700 degrees c. rippled surface morphologies are observed at t(g) = 700 degrees c, 730 degrees c, and 800 degrees c, but disappear when t(g) = 750 degrees c. a model is presented to explain the formation and the disappearance of the ripples by considering the stability of the step-flow growth. |
| WOS关键词 | CRYSTAL-SURFACES ; SI(100) SURFACE ; VICINAL SI(001) ; SI ; STEPS ; STRESS ; ORIGIN ; TEMPERATURE ; ANISOTROPY ; BANDWIDTH |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000298493500049 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428144 |
| 专题 | 半导体研究所 |
| 通讯作者 | Cheng Bu-Wen |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu Wei-Xuan,Cheng Bu-Wen,Xue Chun-Lai,et al. Formation of rippled surface morphology during si/si (100) epitaxy by ultrahigh vacuum chemical vapour deposition[J]. Chinese physics b,2011,20(12):7. |
| APA | Hu Wei-Xuan,Cheng Bu-Wen,Xue Chun-Lai,Su Shao-Jian,&Wang Qi-Ming.(2011).Formation of rippled surface morphology during si/si (100) epitaxy by ultrahigh vacuum chemical vapour deposition.Chinese physics b,20(12),7. |
| MLA | Hu Wei-Xuan,et al."Formation of rippled surface morphology during si/si (100) epitaxy by ultrahigh vacuum chemical vapour deposition".Chinese physics b 20.12(2011):7. |
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来源：半导体研究所
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