Two-color in0.4ga0.6as/al0.1ga0.9as quantum dot infrared photodetector with double tunneling barriers
文献类型：期刊论文
| 作者 | Huang, Jianliang; Ma, Wenquan; Wei, Yang; Zhang, Yanhua; Huo, Yongheng; Cui, Kai; Chen, Lianghui |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2011-03-07 |
| 卷号 | 98期号:10页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3561777 |
| 通讯作者 | Ma, wenquan(wqma@semi.ac.cn) |
| 英文摘要 | We report a two-color quantum dot infrared photodetector (qdip) using double tunneling barriers (dtbs) on one side of the ingaas/algaas dots. the two-color detection is achieved by changing the polarity of the applied bias voltages. in contrast, the same qdip structure without the dtbs does not exhibit this detection wavelength tunability by switching the bias polarity. the two-color detection is ascribed to a different escape mechanism of electrons between positive and negative biases. the electrons escape out of the quantum well through resonant tunneling for a positive bias voltage while tunnel through a triangular barrier for a negative bias voltage. (c) 2011 american institute of physics. [doi:10.1063/1.3561777] |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000288277200072 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428165 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ma, Wenquan |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, Jianliang,Ma, Wenquan,Wei, Yang,et al. Two-color in0.4ga0.6as/al0.1ga0.9as quantum dot infrared photodetector with double tunneling barriers[J]. Applied physics letters,2011,98(10):3. |
| APA | Huang, Jianliang.,Ma, Wenquan.,Wei, Yang.,Zhang, Yanhua.,Huo, Yongheng.,...&Chen, Lianghui.(2011).Two-color in0.4ga0.6as/al0.1ga0.9as quantum dot infrared photodetector with double tunneling barriers.Applied physics letters,98(10),3. |
| MLA | Huang, Jianliang,et al."Two-color in0.4ga0.6as/al0.1ga0.9as quantum dot infrared photodetector with double tunneling barriers".Applied physics letters 98.10(2011):3. |
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来源：半导体研究所
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