Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates
文献类型：期刊论文
| 作者 | Wang Wei; Su Shao-Jian; Zheng Jun; Zhang Guang-Ze; Zuo Yu-Hua; Cheng Bu-Wen; Wang Qi-Ming |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2011-06-01 |
| 卷号 | 20期号:6页码:5 |
| 关键词 | Gesn alloys Strained Strain-relaxed Molecular beam epitaxy |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/20/6/068103 |
| 通讯作者 | Cheng bu-wen(cbw@semi.ac.cn) |
| 英文摘要 | Epitaxial ge1-xsnx alloys are grown separately on a ge-buffer/si(100) substrate and directly on a si(100)subs trate by molecular beam epitaxy (mbe) at low temperature. in the case of the ge buffer/si(100)substrate, a high crystalline quality strained ge0.97sn0.03 alloy is grown, with a chi(min) value of 6.7% measured by channeling and random rutherford backscattering spectrometry (rbs), and a surface root-mean-square (rms) roughness of 1.568 nm obtained by atomic force microscopy (afm). in the case of the si(100)substrate, strain-relaxed ge0.97sn0.03 alloys are epitaxially grown at 150 degrees c-300 degrees c, with the degree of strain relaxation being more than 96%. the x-ray diffraction (xrd) and afm measurements demonstrate that the alloys each have a good crystallin equality and a relatively flat surface. the predominant defects accommodating the large misfit are lomer edge dislocations at the interface,which are parallel to the interface plane and should not degrade electrical properties and device performance. |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000291388800076 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428172 |
| 专题 | 半导体研究所 |
| 通讯作者 | Cheng Bu-Wen |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Wei,Su Shao-Jian,Zheng Jun,et al. Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates[J]. Chinese physics b,2011,20(6):5. |
| APA | Wang Wei.,Su Shao-Jian.,Zheng Jun.,Zhang Guang-Ze.,Zuo Yu-Hua.,...&Wang Qi-Ming.(2011).Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates.Chinese physics b,20(6),5. |
| MLA | Wang Wei,et al."Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates".Chinese physics b 20.6(2011):5. |
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来源：半导体研究所
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