Circular photogalvanic effect induced by near-infrared radiation in inas quantum wires patterned quasi-two-dimensional electron system
文献类型:期刊论文
作者 | Jiang, Chongyun; Chen, Yonghai; Ma, Hui; Yu, Jinling; Liu, Yu |
刊名 | Applied physics letters
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出版日期 | 2011-06-06 |
卷号 | 98期号:23页码:3 |
ISSN号 | 0003-6951 |
DOI | 10.1063/1.3596467 |
通讯作者 | Jiang, chongyun() |
英文摘要 | In this letter we investigated the inas/inalas quantum wires (qwrs) superlattice by optically exciting the structure with near-infrared radiation. by varying the helicity of the radiation at room temperature we observed the circular photogalvanic effect related to the c(2v) symmetry of the structure, which could be attributed to the formation of a quasi-two-dimensional system underlying in the vicinity of the qwrs pattern. the ratio of rashba and dresselhaus terms shows an evolution of the spin-orbit interaction in quasi-two-dimensional structure with the qwr layer deposition thickness. (c) 2011 american institute of physics. [doi:10.1063/1.3596467] |
WOS关键词 | OPTICAL-PROPERTIES ; DOTS |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000291658900041 |
出版者 | AMER INST PHYSICS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428173 |
专题 | 半导体研究所 |
通讯作者 | Jiang, Chongyun |
作者单位 | Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Jiang, Chongyun,Chen, Yonghai,Ma, Hui,et al. Circular photogalvanic effect induced by near-infrared radiation in inas quantum wires patterned quasi-two-dimensional electron system[J]. Applied physics letters,2011,98(23):3. |
APA | Jiang, Chongyun,Chen, Yonghai,Ma, Hui,Yu, Jinling,&Liu, Yu.(2011).Circular photogalvanic effect induced by near-infrared radiation in inas quantum wires patterned quasi-two-dimensional electron system.Applied physics letters,98(23),3. |
MLA | Jiang, Chongyun,et al."Circular photogalvanic effect induced by near-infrared radiation in inas quantum wires patterned quasi-two-dimensional electron system".Applied physics letters 98.23(2011):3. |
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来源:半导体研究所
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