An intermediate-band-assisted avalanche multiplication in inas/ingaas quantum dots-in-well infrared photodetector
文献类型：期刊论文
| 作者 | Lin, L.1; Zhen, H. L.1; Zhou, X. H.1; Li, N.1; Lu, W.1; Liu, F. Q.2 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2011-02-14 |
| 卷号 | 98期号:7页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3554758 |
| 通讯作者 | Lu, w.(luwei@mail.sitp.ac.cn) |
| 英文摘要 | The avalanche multiplication of photocurrent in inas/ingaas quantum dot infrared photodetectors (qdips) has been observed in the temperature range from 20 to 80 k. the avalanche onset voltage v-th, being larger than 1.2 v at t < 55 k, is reduced to less than 0.8 v at t > 60 k. this singularity of v-th indicates that intermediate-band-assisted avalanche multiplication is achieved in our dots-in-well structure, which benefits from the abrupt change of the electron occupation of the intermediate band at a temperature of approximately 55 k. the remarkable reduction of v-th for qdip is a useful enhancement in the infrared detector's performance. (c) 2011 american institute of physics. [doi:10.1063/1.3554758] |
| WOS关键词 | DETECTORS ; RESPONSIVITY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000287507200087 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428182 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lu, W. |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lin, L.,Zhen, H. L.,Zhou, X. H.,et al. An intermediate-band-assisted avalanche multiplication in inas/ingaas quantum dots-in-well infrared photodetector[J]. Applied physics letters,2011,98(7):3. |
| APA | Lin, L.,Zhen, H. L.,Zhou, X. H.,Li, N.,Lu, W.,&Liu, F. Q..(2011).An intermediate-band-assisted avalanche multiplication in inas/ingaas quantum dots-in-well infrared photodetector.Applied physics letters,98(7),3. |
| MLA | Lin, L.,et al."An intermediate-band-assisted avalanche multiplication in inas/ingaas quantum dots-in-well infrared photodetector".Applied physics letters 98.7(2011):3. |
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来源：半导体研究所
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