Spatial hole burning degradation of algaas/gaas laser diodes
文献类型:期刊论文
作者 | Qiao, Y. B.1; Feng, S. W.1; Xiong, C.1; Wang, X. W.2; Ma, X. Y.2; Zhu, H.1; Wei, G. H.1 |
刊名 | Applied physics letters
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出版日期 | 2011-09-05 |
卷号 | 99期号:10页码:3 |
关键词 | Aluminium compounds Carrier density Cathodoluminescence Gallium arsenide Iii-v semiconductors Optical hole burning Optical microscopy Quantum well lasers Semiconductor epitaxial layers X-ray diffraction |
ISSN号 | 0003-6951 |
DOI | 10.1063/1.3634051 |
通讯作者 | Feng, s. w.(shwfeng@bjut.edu.cn) |
英文摘要 | The degradation of algaas/gaas laser diodes is studied in detail using laser scanning confocal microscopy, cathodoluminescence images, and x-ray diffraction (xrd) techniques. our analysis has identified a degradation mechanism that results from the periodic distribution of the carrier density and the near-field intensity originating from periodic spatial hole burning. based on the xrd measurements, we find that the epitaxial layer enters a polycrystalline phase during degradation due to the dark line defects, and the out-of-plane strain and in-plane compressive stress are induced by degradation. (c) 2011 american institute of physics. [doi: 10.1063/1.3634051] |
WOS关键词 | FACETS ; OPERATION |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000294739100058 |
出版者 | AMER INST PHYSICS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428183 |
专题 | 半导体研究所 |
通讯作者 | Feng, S. W. |
作者单位 | 1.Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Qiao, Y. B.,Feng, S. W.,Xiong, C.,et al. Spatial hole burning degradation of algaas/gaas laser diodes[J]. Applied physics letters,2011,99(10):3. |
APA | Qiao, Y. B..,Feng, S. W..,Xiong, C..,Wang, X. W..,Ma, X. Y..,...&Wei, G. H..(2011).Spatial hole burning degradation of algaas/gaas laser diodes.Applied physics letters,99(10),3. |
MLA | Qiao, Y. B.,et al."Spatial hole burning degradation of algaas/gaas laser diodes".Applied physics letters 99.10(2011):3. |
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来源:半导体研究所
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