中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Spatial hole burning degradation of algaas/gaas laser diodes

文献类型:期刊论文

作者Qiao, Y. B.1; Feng, S. W.1; Xiong, C.1; Wang, X. W.2; Ma, X. Y.2; Zhu, H.1; Wei, G. H.1
刊名Applied physics letters
出版日期2011-09-05
卷号99期号:10页码:3
关键词Aluminium compounds Carrier density Cathodoluminescence Gallium arsenide Iii-v semiconductors Optical hole burning Optical microscopy Quantum well lasers Semiconductor epitaxial layers X-ray diffraction
ISSN号0003-6951
DOI10.1063/1.3634051
通讯作者Feng, s. w.(shwfeng@bjut.edu.cn)
英文摘要The degradation of algaas/gaas laser diodes is studied in detail using laser scanning confocal microscopy, cathodoluminescence images, and x-ray diffraction (xrd) techniques. our analysis has identified a degradation mechanism that results from the periodic distribution of the carrier density and the near-field intensity originating from periodic spatial hole burning. based on the xrd measurements, we find that the epitaxial layer enters a polycrystalline phase during degradation due to the dark line defects, and the out-of-plane strain and in-plane compressive stress are induced by degradation. (c) 2011 american institute of physics. [doi: 10.1063/1.3634051]
WOS关键词FACETS ; OPERATION
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000294739100058
出版者AMER INST PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2428183
专题半导体研究所
通讯作者Feng, S. W.
作者单位1.Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Qiao, Y. B.,Feng, S. W.,Xiong, C.,et al. Spatial hole burning degradation of algaas/gaas laser diodes[J]. Applied physics letters,2011,99(10):3.
APA Qiao, Y. B..,Feng, S. W..,Xiong, C..,Wang, X. W..,Ma, X. Y..,...&Wei, G. H..(2011).Spatial hole burning degradation of algaas/gaas laser diodes.Applied physics letters,99(10),3.
MLA Qiao, Y. B.,et al."Spatial hole burning degradation of algaas/gaas laser diodes".Applied physics letters 99.10(2011):3.

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来源:半导体研究所

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