Improvement of electroluminescent performance of n-zno/aln/p-gan light-emitting diodes by optimizing the aln barrier layer
文献类型：期刊论文
| 作者 | Zhang, S. G.1; Zhang, X. W.1; Yin, Z. G.1; Wang, J. X.2; Dong, J. J.1; Wang, Z. G.1; Qu, S.1; Cui, B.3; Wowchak, A. M.3; Dabiran, A. M.3 |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2011-05-01 |
| 卷号 | 109期号:9页码:6 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.3590399 |
| 通讯作者 | Zhang, x. w.(xwzhang@semi.ac.cn) |
| 英文摘要 | The effects of the growth temperature and thickness of aln layer on the electroluminescence (el) performance of n-zno/aln/p-gan devices have been systematically investigated. it is found that the higher growth temperature of aln layer (t(aln)) may facilitate the improvement of el performance of the device, which is attributed to that the crystalline quality of aln layer improves with increasing growth temperatures taln. besides the crystallinity of aln layer, the thickness of aln barrier layer plays an important role on the performance of the device. the thinner aln layer is not enough to cover the whole surface of gan, while the thicker aln layer is unfavorable to the tunneling of carriers and many of electrons will be captured and recombined nonradiatively via the deep donors within the thick aln layer. we have demonstrated that the aln layer at the growth temperature of 700 degrees c with an optimized thickness of around 10 nm could effectively confine the injected carriers and suppress the formation of interfacial layer, thus, the el performance of n-zno/aln/p-gan device could be significantly improved. (c) 2011 american institute of physics. [doi:10.1063/1.3590399] |
| WOS关键词 | UV ELECTROLUMINESCENCE ; THIN-FILMS ; ZNO |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000290588500069 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428197 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, X. W. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol R&D Ctr, Beijing 100083, Peoples R China 3.SVT Associates Inc, Eden Prairie, MN 55344 USA |
| 推荐引用方式 GB/T 7714 | Zhang, S. G.,Zhang, X. W.,Yin, Z. G.,et al. Improvement of electroluminescent performance of n-zno/aln/p-gan light-emitting diodes by optimizing the aln barrier layer[J]. Journal of applied physics,2011,109(9):6. |
| APA | Zhang, S. G..,Zhang, X. W..,Yin, Z. G..,Wang, J. X..,Dong, J. J..,...&Chow, P. P..(2011).Improvement of electroluminescent performance of n-zno/aln/p-gan light-emitting diodes by optimizing the aln barrier layer.Journal of applied physics,109(9),6. |
| MLA | Zhang, S. G.,et al."Improvement of electroluminescent performance of n-zno/aln/p-gan light-emitting diodes by optimizing the aln barrier layer".Journal of applied physics 109.9(2011):6. |
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来源：半导体研究所
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