Electrical and magnetic properties of ga1-xgdxn grown by metal organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Gupta, Shalini1; Zaidi, Tahir1; Melton, Andrew1; Malguth, Enno1; Yu, Hongbo1; Liu, Zhiqiang2,3; Liu, Xiaotao4; Schwartz, Justin4; Ferguson, Ian T.1,2,5 |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2011-10-15 |
| 卷号 | 110期号:8页码:5 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.3656019 |
| 通讯作者 | Ferguson, ian t.(ianf@uncc.edu) |
| 英文摘要 | This paper presents the first report on gd doping (0%-4%) of gan thin films by metal organic chemical vapor deposition. the ga1-xgdxn films grown in this study were found to be of good crystalline quality, single-phase, and unstrained, with a high saturation magnetization strength of 20 emu/cm(3) being obtained for gan films doped with 2% gd at room temperature. furthermore, these films were found to be conductive with an enhanced n-type behavior suggesting that unintentional donors are responsible for stabilizing the ferromagnetic phase in as-grown ga1-xgdxn. additionally, it was found that this magnetization can be enhanced by n-(si: 10(18) cm(-3)) and p-(mg: 10(19) cm(-3)) doping to 110 emu/cm(3) and similar to 500 emu/cm(3), respectively. this paper shows empirically that holes are more efficient in stabilizing the ferromagnetic phase as compared to electrons. overall, this research has resulted in a room temperature ferromagnetic dilute magnetic semiconductor that is conductive and whose magnetic properties can be tuned by carrier doping thus providing a path towards realizing spintronic devices. (c) 2011 american institute of physics. [doi:10.1063/1.3656019] |
| WOS关键词 | FERROMAGNETIC PROPERTIES ; SEMICONDUCTORS ; GAN ; GAGDN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000296519900102 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428204 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ferguson, Ian T. |
| 作者单位 | 1.Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA 2.Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA 3.Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr, Beijing 100083, Peoples R China 4.N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27518 USA 5.Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA |
| 推荐引用方式 GB/T 7714 | Gupta, Shalini,Zaidi, Tahir,Melton, Andrew,et al. Electrical and magnetic properties of ga1-xgdxn grown by metal organic chemical vapor deposition[J]. Journal of applied physics,2011,110(8):5. |
| APA | Gupta, Shalini.,Zaidi, Tahir.,Melton, Andrew.,Malguth, Enno.,Yu, Hongbo.,...&Ferguson, Ian T..(2011).Electrical and magnetic properties of ga1-xgdxn grown by metal organic chemical vapor deposition.Journal of applied physics,110(8),5. |
| MLA | Gupta, Shalini,et al."Electrical and magnetic properties of ga1-xgdxn grown by metal organic chemical vapor deposition".Journal of applied physics 110.8(2011):5. |
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来源：半导体研究所
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