A theoretical calculation of the impact of gan cap and alxga1-xn barrier thickness fluctuations on two-dimensional electron gas in a gan/alxga1-xn/gan heterostructure
文献类型：期刊论文
| 作者 | Liu, Guipeng1; Wu, Ju1; Lu, Yanwu2; Zhang, Biao1; Li, Chengming1; Sang, Ling1; Song, Yafeng1; Shi, Kai1; Liu, Xianglin1; Yang, Shaoyan1 |
| 刊名 | Ieee transactions on electron devices
 |
| 出版日期 | 2011-12-01 |
| 卷号 | 58期号:12页码:4272-4275 |
| 关键词 | Cap-thickness-fluctuation (ctf) and barrierthickness fluctuation (btf) scattering Interface roughness scattering Two dimensional electron gas (2deg) |
| ISSN号 | 0018-9383 |
| DOI | 10.1109/ted.2011.2167334 |
| 通讯作者 | Liu, guipeng(liugp@semi.ac.cn) |
| 英文摘要 | The electron mobility in a 2-d electron gas in a gan/alxga1-xn/gan heterostructure limited by gan cap-thickness-fluctuation (ctf) and alxga1-xn barrier-thickness-fluctuation (btf) scattering is calculated considering the strong spontaneous and piezoelectric polarization. the calculated results reveal that the electron mobility limited by ctf and btf scattering is lower than that limited by interface roughness scattering if the alxga1-xn barrier layer is thin enough (several nanometers). |
| WOS关键词 | OUTPUT POWER-DENSITY ; PIEZOELECTRIC POLARIZATION ; ALGAN/GAN HETEROSTRUCTURES ; MOBILITY TRANSISTORS ; GANHEMTS ; FIELD ; INN ; ALN |
| WOS研究方向 | Engineering ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000297337000019 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428215 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, Guipeng |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Guipeng,Wu, Ju,Lu, Yanwu,et al. A theoretical calculation of the impact of gan cap and alxga1-xn barrier thickness fluctuations on two-dimensional electron gas in a gan/alxga1-xn/gan heterostructure[J]. Ieee transactions on electron devices,2011,58(12):4272-4275. |
| APA | Liu, Guipeng.,Wu, Ju.,Lu, Yanwu.,Zhang, Biao.,Li, Chengming.,...&Wang, Zhanguo.(2011).A theoretical calculation of the impact of gan cap and alxga1-xn barrier thickness fluctuations on two-dimensional electron gas in a gan/alxga1-xn/gan heterostructure.Ieee transactions on electron devices,58(12),4272-4275. |
| MLA | Liu, Guipeng,et al."A theoretical calculation of the impact of gan cap and alxga1-xn barrier thickness fluctuations on two-dimensional electron gas in a gan/alxga1-xn/gan heterostructure".Ieee transactions on electron devices 58.12(2011):4272-4275. |
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来源：半导体研究所
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