Silicon optical modulator with integrated grating couplers based on 0.18-mu m complementary metal oxide semiconductor technology
文献类型：期刊论文
| 作者 | Xu, Haihua; Li, Zhiyong; Zhu, Yu; Li, Yuntao; Yu, Yude; Yu, Jinzhong |
| 刊名 | Optical engineering
 |
| 出版日期 | 2011-04-01 |
| 卷号 | 50期号:4页码:5 |
| 关键词 | Silicon photonics Modulation Grating coupler Pre-emphasis |
| ISSN号 | 0091-3286 |
| DOI | 10.1117/1.3560264 |
| 通讯作者 | Xu, haihua(xu_haihua@semi.ac.cn) |
| 英文摘要 | A silicon p-i-n diode mach-zehnder optical modulator integrated with grating couplers is fabricated in 0.18-mu m complementary metal oxide semiconductor technology. the device has an ultracompact length of 200 mu m. high modulation efficiency with a figure of merit of v(pi)l = 0.22 v mm is demonstrated. a novel pre-emphasis technique is introduced to achieve high-speed modulation, and a data transmission rate of 3 gbps is present. (c) 2011 society of photo-optical instrumentation engineers (spie). [doi: 10.1117/1.3560264] |
| WOS关键词 | MACH-ZEHNDER MODULATOR ; CARRIER-DEPLETION ; WAVE-GUIDES ; COMPACT |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000290028900014 |
| 出版者 | SPIE-SOC PHOTOPTICAL INSTRUMENTATION ENGINEERS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428218 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, Haihua |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, Haihua,Li, Zhiyong,Zhu, Yu,et al. Silicon optical modulator with integrated grating couplers based on 0.18-mu m complementary metal oxide semiconductor technology[J]. Optical engineering,2011,50(4):5. |
| APA | Xu, Haihua,Li, Zhiyong,Zhu, Yu,Li, Yuntao,Yu, Yude,&Yu, Jinzhong.(2011).Silicon optical modulator with integrated grating couplers based on 0.18-mu m complementary metal oxide semiconductor technology.Optical engineering,50(4),5. |
| MLA | Xu, Haihua,et al."Silicon optical modulator with integrated grating couplers based on 0.18-mu m complementary metal oxide semiconductor technology".Optical engineering 50.4(2011):5. |
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来源：半导体研究所
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