Effect of growth temperature on the morphology and phonon properties of inas nanowires on si substrates
文献类型：期刊论文
| 作者 | Li, Tianfeng1,3; Chen, Yonghai1; Lei, Wen2; Zhou, Xiaolong1; Luo, Shuai1; Hu, Yongzheng1; Wang, Lijun1; Yang, Tao1; Wang, Zhanguo1 |
| 刊名 | Nanoscale research letters
 |
| 出版日期 | 2011-07-21 |
| 卷号 | 6页码:7 |
| ISSN号 | 1931-7573 |
| DOI | 10.1186/1556-276x-6-463 |
| 通讯作者 | Chen, yonghai() |
| 英文摘要 | Catalyst-free, vertical array of inas nanowires (nws) are grown on si (111) substrate using mocvd technique. the as- grown inas nws show a zinc- blende crystal structure along a < 111 > direction. it is found that both the density and length of inas nws decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst- free growth of inas nws is governed by the nucleation kinetics. the longitudinal optical and transverse optical (to) mode of inas nws present a phonon frequency slightly lower than those of inas bulk materials, which are speculated to be caused by the defects in the nws. a surface optical mode is also observed for the inas nws, which shifts to lower wave- numbers when the diameter of nws is decreased, in agreement with the theory prediction. the carrier concentration is extracted to be 2.25 x 10(17) cm(-3) from the raman line shape analysis. a splitting of to modes is also observed. |
| WOS关键词 | RAMAN-SCATTERING ; SEMICONDUCTING NANOWIRES ; OPTOELECTRONIC DEVICES ; PHOSPHIDE NANOWIRES ; OPTICAL PHONONS ; SILICON ; CRYSTALS ; SPECTRA |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000296250300002 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428229 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, Yonghai |
| 作者单位 | 1.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia 3.Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Tianfeng,Chen, Yonghai,Lei, Wen,et al. Effect of growth temperature on the morphology and phonon properties of inas nanowires on si substrates[J]. Nanoscale research letters,2011,6:7. |
| APA | Li, Tianfeng.,Chen, Yonghai.,Lei, Wen.,Zhou, Xiaolong.,Luo, Shuai.,...&Wang, Zhanguo.(2011).Effect of growth temperature on the morphology and phonon properties of inas nanowires on si substrates.Nanoscale research letters,6,7. |
| MLA | Li, Tianfeng,et al."Effect of growth temperature on the morphology and phonon properties of inas nanowires on si substrates".Nanoscale research letters 6(2011):7. |
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来源：半导体研究所
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