Quantum-dot-induced optical transition enhancement in inas quantum-dot-embedded p-i-n gaas solar cells
文献类型：期刊论文
| 作者 | Shang, X. -J.1,2; He, J. -F.2; Li, M. -F.2; Zhan, F.2; Ni, H. -Q.2; Niu, Z. -C.2; Pettersson, H.3,4; Fu, Y.1 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2011-09-12 |
| 卷号 | 99期号:11页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3638488 |
| 通讯作者 | Fu, y.(fyg@theochem.kth.se) |
| 英文摘要 | Photocurrents (pcs) of three p-i-n gaas solar cells, sample a with inas quantum dots (qds) embedded in the depletion region, b with qds in the n region, and c without qds, were studied experimentally and theoretically. above gaas bandgap, the pc of a is increased, while b is decreased with respect to c, since in a, the qd-induced reflection of hole wave function increases its overlap with electron wave function so that the optical transition rate is enhanced, while carrier mobility in b is reduced due to qd-induced potential variations. moreover, a and b have increased pcs in the sub-gaas-bandgap range due to qd optical absorptions. (c) 2011 american institute of physics. [doi:10.1063/1.3638488] |
| WOS关键词 | WELL INFRARED PHOTODETECTOR ; PHOTOCURRENT ; EFFICIENCY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000295034400089 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428241 |
| 专题 | 半导体研究所 |
| 通讯作者 | Fu, Y. |
| 作者单位 | 1.Royal Inst Technol, Sch Biotechnol, Div Theoret Chem & Biol, S-10691 Stockholm, Sweden 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 3.Halmstad Univ, Ctr Appl Math & Phys, S-30118 Halmstad, Sweden 4.Lund Univ, Solid State Phys Nanometer Struct Consortium, S-22100 Lund, Sweden |
| 推荐引用方式 GB/T 7714 | Shang, X. -J.,He, J. -F.,Li, M. -F.,et al. Quantum-dot-induced optical transition enhancement in inas quantum-dot-embedded p-i-n gaas solar cells[J]. Applied physics letters,2011,99(11):3. |
| APA | Shang, X. -J..,He, J. -F..,Li, M. -F..,Zhan, F..,Ni, H. -Q..,...&Fu, Y..(2011).Quantum-dot-induced optical transition enhancement in inas quantum-dot-embedded p-i-n gaas solar cells.Applied physics letters,99(11),3. |
| MLA | Shang, X. -J.,et al."Quantum-dot-induced optical transition enhancement in inas quantum-dot-embedded p-i-n gaas solar cells".Applied physics letters 99.11(2011):3. |
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来源：半导体研究所
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