中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Conduction and valence band discontinuities in some new semiconductor heterojunctions

文献类型:期刊论文

作者Zhu, Qinsheng; Wu, Ju; Li, Chengming; Wang, Zhanguo
刊名Journal of nanoscience and nanotechnology
出版日期2011-11-01
卷号11期号:11页码:9368-9383
关键词Band discontinuity Heterojunction X-ray photoemission spectroscopy (xps)
ISSN号1533-4880
DOI10.1166/jnn.2011.5309
通讯作者Zhu, qinsheng()
英文摘要Conduction and valence band discontinuities (band offsets) in the heterojunctions consisting of zno/4h-sic, zno/gaas, mgo/4h-sic, mgo/ain, inn/zno, inn/gaas, mgo/inn, and inn/4h-sic, were precisely determined by x-ray photoelectron spectroscopy (xps) measurement. as an example, the xps measurement on the zno/4h-sic heterojunction is described in detail in the beginning of the section of the experiments. we also analyzed several factors which may have impact on the band offset in a practical heterojunction. the deviation in band offset induced by both polar and non-polar heterojunction band bending from the true value was also characterized by taking into account the intrinsic polarization field in the heterojunction consisting of the two polar materials.
WOS关键词RAY PHOTOELECTRON-SPECTROSCOPY ; ZNO ; OFFSET ; GAN
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000298765800004
出版者AMER SCIENTIFIC PUBLISHERS
URI标识http://www.irgrid.ac.cn/handle/1471x/2428243
专题半导体研究所
通讯作者Zhu, Qinsheng
作者单位Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zhu, Qinsheng,Wu, Ju,Li, Chengming,et al. Conduction and valence band discontinuities in some new semiconductor heterojunctions[J]. Journal of nanoscience and nanotechnology,2011,11(11):9368-9383.
APA Zhu, Qinsheng,Wu, Ju,Li, Chengming,&Wang, Zhanguo.(2011).Conduction and valence band discontinuities in some new semiconductor heterojunctions.Journal of nanoscience and nanotechnology,11(11),9368-9383.
MLA Zhu, Qinsheng,et al."Conduction and valence band discontinuities in some new semiconductor heterojunctions".Journal of nanoscience and nanotechnology 11.11(2011):9368-9383.

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来源:半导体研究所

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