Epitaxial growth of ge0.975sn0.025 alloy films on si(001) substrates by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Su Shao-Jian; Wang Wei; Zhang Guang-Ze; Hu Wei-Xuan; Bai An-Qi; Xue Chun-Lai; Zuo Yu-Hua; Cheng Bu-Wen; Wang Qi-Ming |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2011-02-01 |
| 卷号 | 60期号:2页码:5 |
| 关键词 | Gesn Ge Molecular beam epitaxy Epitaxial growth |
| ISSN号 | 1000-3290 |
| 通讯作者 | Cheng bu-wen(cbw@red.semi.ac.cn) |
| 英文摘要 | Ge0.975sn0.025 alloy films have been grown on si(001) substrates by molecular beam epitaxy with high-quality ge films as buffer layers. the alloys have high crystalline quality without sn surface segregation, determined by double crystal x-ray diffraction and rutherford backscattering spectra measurement. in addition, the ge0.975sn0.025 alloy has rather good thermal stability at 500 degrees c, which makes it possible to be used in si-based optoelectronic devices. |
| WOS关键词 | SEMICONDUCTORS ; GE(001)2X1 |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000287947000106 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428244 |
| 专题 | 半导体研究所 |
| 通讯作者 | Cheng Bu-Wen |
| 作者单位 | Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Su Shao-Jian,Wang Wei,Zhang Guang-Ze,et al. Epitaxial growth of ge0.975sn0.025 alloy films on si(001) substrates by molecular beam epitaxy[J]. Acta physica sinica,2011,60(2):5. |
| APA | Su Shao-Jian.,Wang Wei.,Zhang Guang-Ze.,Hu Wei-Xuan.,Bai An-Qi.,...&Wang Qi-Ming.(2011).Epitaxial growth of ge0.975sn0.025 alloy films on si(001) substrates by molecular beam epitaxy.Acta physica sinica,60(2),5. |
| MLA | Su Shao-Jian,et al."Epitaxial growth of ge0.975sn0.025 alloy films on si(001) substrates by molecular beam epitaxy".Acta physica sinica 60.2(2011):5. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。