Effect of compensation doping on the electrical and optical properties of mid-infrared type-ii inas/gasb superlattice photodetectors
文献类型：期刊论文
| 作者 | Wang Yong-Bin; Xu Yun; Zhang Yu; Yu Xiu; Song Guo-Feng; Chen Liang-Hui |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2011-06-01 |
| 卷号 | 20期号:6页码:6 |
| 关键词 | Inas/gasb superlattices P-doping concentration Electrical and optical properties |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/20/6/067302 |
| 通讯作者 | Xu yun(xuyun@red.semi.ac.cn) |
| 英文摘要 | This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-ii inas/gasb superlattices with different beryllium concentrations in the inas layer of the active region. dark current, resistance-area product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. the superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. the optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. to make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 x 10(15) cm(-3) in the active region is believed to have the best overall performances. |
| WOS关键词 | INFRARED DETECTORS ; WAVELENGTH |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000291388800060 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428262 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu Yun |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Yong-Bin,Xu Yun,Zhang Yu,et al. Effect of compensation doping on the electrical and optical properties of mid-infrared type-ii inas/gasb superlattice photodetectors[J]. Chinese physics b,2011,20(6):6. |
| APA | Wang Yong-Bin,Xu Yun,Zhang Yu,Yu Xiu,Song Guo-Feng,&Chen Liang-Hui.(2011).Effect of compensation doping on the electrical and optical properties of mid-infrared type-ii inas/gasb superlattice photodetectors.Chinese physics b,20(6),6. |
| MLA | Wang Yong-Bin,et al."Effect of compensation doping on the electrical and optical properties of mid-infrared type-ii inas/gasb superlattice photodetectors".Chinese physics b 20.6(2011):6. |
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来源：半导体研究所
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