Ordered inas nanodots formed on the patterned gaas substrate by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Jin, Lan; Zhou, Huiying; Qu, Shengchun; Wang, Zhanguo |
| 刊名 | Materials science in semiconductor processing
 |
| 出版日期 | 2011-06-01 |
| 卷号 | 14期号:2页码:108-113 |
| 关键词 | Patterned substrate Ion implantation Ordered nanodots Anodic aluminum oxide |
| ISSN号 | 1369-8001 |
| DOI | 10.1016/j.mssp.2011.01.009 |
| 通讯作者 | Jin, lan(jinlan06@semi.ac.cn) |
| 英文摘要 | Ordered indium arsenide (inas) nanodots are formed by molecular beam epitaxy (mbe) on patterned gallium arsenide (gaas) substrates, which are prepared by implanting manganese (mn) ions through anodic aluminum oxide (aao) membranes into the gaas wafers. morphology and structure of the patterned gaas substrate is determined both by the oxygen desorption and the mn ion diffusion. suitable patterned gaas substrates with the same dosage of mn ions for the following epitaxy can be obtained by controlling the deoxidization as(4) pressures during the oxygen desorption. images of samples with different mn ion implantation dosages and different molecular beam epitaxial conditions for the following deposition of inas nanodots on the patterned gaas substrates are characterized by atomic force microscopy (afm). the order of the inas nanodots is determined both by the aao membrane and dosage of mn ions. the density of inas nanodots has great relation to the pore density of the aao. (c) 2011 elsevier ltd. all rights reserved. |
| WOS关键词 | QUANTUM DOTS ; ISLANDS ; GROWTH ; SEMICONDUCTORS ; NANOSTRUCTURES ; COMPUTATION ; INGAAS |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000292408500005 |
| 出版者 | ELSEVIER SCI LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428272 |
| 专题 | 半导体研究所 |
| 通讯作者 | Jin, Lan |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jin, Lan,Zhou, Huiying,Qu, Shengchun,et al. Ordered inas nanodots formed on the patterned gaas substrate by molecular beam epitaxy[J]. Materials science in semiconductor processing,2011,14(2):108-113. |
| APA | Jin, Lan,Zhou, Huiying,Qu, Shengchun,&Wang, Zhanguo.(2011).Ordered inas nanodots formed on the patterned gaas substrate by molecular beam epitaxy.Materials science in semiconductor processing,14(2),108-113. |
| MLA | Jin, Lan,et al."Ordered inas nanodots formed on the patterned gaas substrate by molecular beam epitaxy".Materials science in semiconductor processing 14.2(2011):108-113. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。