Growth of sno2 nanoparticles via thermal evaporation method
文献类型：期刊论文
| 作者 | Li, Yuguo; Peng, Ruiqin; Xiu, Xianwu; Zheng, Xuelei; Zhang, Xiaosen; Zhai, Guannan |
| 刊名 | Superlattices and microstructures
 |
| 出版日期 | 2011-11-01 |
| 卷号 | 50期号:5页码:511-516 |
| 关键词 | Oxides Crystal growth Growth mechanism Luminescence |
| ISSN号 | 0749-6036 |
| DOI | 10.1016/j.spmi.2011.08.013 |
| 通讯作者 | Li, yuguo(liyuguosd@hotmail.com) |
| 英文摘要 | Tin oxide (sno2) nanoparticles were fabricated by evaporation of sn powers at 1000 degrees c in air pressure. the as-deposited sno2 particles were single crystal structure, which were mostly spherical shape, the diameter of particles was ranging from 200 to 600 nm. the photoluminescence (pl) spectrum showed that a sharp emission peak at around 393 nm with the excitation wavelength at 325 nm, which suggested possible applications in nanoscaled optoelectronic devices. it was also found that the holding time affects the morphology of the products. the formation mechanism of sno2 particles was discussed. (c) 2011 elsevier ltd. all rights reserved. |
| WOS关键词 | NANOCRYSTALLINE SNO2 ; OPTICAL-PROPERTIES ; FILMS ; TRANSPARENT ; PERFORMANCE ; ELECTRODES ; CARBON |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000296999500008 |
| 出版者 | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428280 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, Yuguo |
| 作者单位 | Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Yuguo,Peng, Ruiqin,Xiu, Xianwu,et al. Growth of sno2 nanoparticles via thermal evaporation method[J]. Superlattices and microstructures,2011,50(5):511-516. |
| APA | Li, Yuguo,Peng, Ruiqin,Xiu, Xianwu,Zheng, Xuelei,Zhang, Xiaosen,&Zhai, Guannan.(2011).Growth of sno2 nanoparticles via thermal evaporation method.Superlattices and microstructures,50(5),511-516. |
| MLA | Li, Yuguo,et al."Growth of sno2 nanoparticles via thermal evaporation method".Superlattices and microstructures 50.5(2011):511-516. |
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来源：半导体研究所
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