Electronic properties investigation of silicon supersaturated with tellurium
文献类型：期刊论文
| 作者 | Li, Xinyi; Han, Peide; Gao, Lipeng; Mao, Xue; Hu, Shaoxu |
| 刊名 | Applied physics a-materials science & processing
 |
| 出版日期 | 2011-12-01 |
| 卷号 | 105期号:4页码:1021-1024 |
| ISSN号 | 0947-8396 |
| DOI | 10.1007/s00339-011-6537-3 |
| 通讯作者 | Li, xinyi(xyli@semi.ac.cn) |
| 英文摘要 | Hall measurements as a function of temperature and current-voltage (i-v) measurements have been used to study the electronic properties of silicon supersaturated with tellurium (te). the samples were fabricated by ion implantation, followed by thermal annealing at different temperatures in n(2) and by rapid quenching. the experiment results show that the effects on the resistivity and on the hall effect of samples implanted with high doses of te are almost insensitive to temperature. this is not consistent with those of low dose te implanted samples. the dark i-v characteristics and white light i-v characteristics of the junction between the high dose te implanted layer and the substrate were also investigated. the pn junctions of samples with non equilibrium dopant concentrations exhibit decreased rectification, but increased photon to electron conversion efficiency. |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000297162000033 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428284 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, Xinyi |
| 作者单位 | Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Xinyi,Han, Peide,Gao, Lipeng,et al. Electronic properties investigation of silicon supersaturated with tellurium[J]. Applied physics a-materials science & processing,2011,105(4):1021-1024. |
| APA | Li, Xinyi,Han, Peide,Gao, Lipeng,Mao, Xue,&Hu, Shaoxu.(2011).Electronic properties investigation of silicon supersaturated with tellurium.Applied physics a-materials science & processing,105(4),1021-1024. |
| MLA | Li, Xinyi,et al."Electronic properties investigation of silicon supersaturated with tellurium".Applied physics a-materials science & processing 105.4(2011):1021-1024. |
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来源：半导体研究所
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