Investigation of structural and optical anisotropy of m-plane inn films grown on gamma-lialo2(100) by metal organic chemical vapour deposition
文献类型：期刊论文
| 作者 | Fu, D.1,2; Zhang, R.1,2; Liu, B.1,2; Xie, Z. L.1,2; Xiu, X. Q.1,2; Gu, S. L.1,2; Lu, H.1,2; Zheng, Y. D.1,2; Chen, Y. H.3; Wang, Z. G.3 |
| 刊名 | Journal of physics d-applied physics
 |
| 出版日期 | 2011-06-22 |
| 卷号 | 44期号:24页码:5 |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/44/24/245402 |
| 通讯作者 | Fu, d.() |
| 英文摘要 | In this paper a systematic investigation of structural and optical anisotropy of m-plane inn film grown on gamma-lialo2(1 0 0) substrate by metal organic chemical vapour deposition, which is believed to be much more difficult than molecular beam epitaxy, is presented. the inn film showed pure m-plane phase as confirmed by x-ray diffraction omega/2 theta scan together with polarized raman spectroscopy. the epitaxial relationship between the m-plane inn and the substrate was found to be [0 0 0 1](inn) parallel to [0 1 0](lao) and [1 1 - 2 0](inn) parallel to [0 0 1](lao). the inherent film mosaic anisotropy was studied by x-ray rocking curve analysis. atomic force microscopy revealed that stripe-like features appear on the surface of the m-plane inn film, which originated from the replication of the surface morphological anisotropy of the substrate. scanning electron microscopy showed blocky surface structures that were indicative of three-dimensional growth mode, which was related to the anisotropic structural mismatch of the film and the foreign substrate. a small direct band gap of similar to 0.7ev of the m-plane inn film was confirmed by low-temperature photoluminescence spectra, which showed evident polarization anisotropy in terms of both intensity and peak energy. finally, a blue-shift of absorption edge as compared with the photoluminescence peak energy was observed and fully accounted for by the burstein-moss effect. |
| WOS关键词 | FUNDAMENTAL-BAND GAP ; INDIUM NITRIDE ; BUFFER LAYER ; DEPENDENCE ; SAPPHIRE ; MOCVD |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000291151600010 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428286 |
| 专题 | 半导体研究所 |
| 通讯作者 | Fu, D. |
| 作者单位 | 1.Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China 2.Nanjing Natl Lab Microstruct, Nanjing 210093, Jiangsu, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fu, D.,Zhang, R.,Liu, B.,et al. Investigation of structural and optical anisotropy of m-plane inn films grown on gamma-lialo2(100) by metal organic chemical vapour deposition[J]. Journal of physics d-applied physics,2011,44(24):5. |
| APA | Fu, D..,Zhang, R..,Liu, B..,Xie, Z. L..,Xiu, X. Q..,...&Wang, Z. G..(2011).Investigation of structural and optical anisotropy of m-plane inn films grown on gamma-lialo2(100) by metal organic chemical vapour deposition.Journal of physics d-applied physics,44(24),5. |
| MLA | Fu, D.,et al."Investigation of structural and optical anisotropy of m-plane inn films grown on gamma-lialo2(100) by metal organic chemical vapour deposition".Journal of physics d-applied physics 44.24(2011):5. |
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来源：半导体研究所
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