Growth and device characteristics of nano-folding ingan/gan multiple quantum well led
文献类型：期刊论文
| 作者 | Chen Gui-Feng3; Tan Xiao-Dong3; Wan Wei-Tian3; Shen Jun2; Hao Qiu-Yan3; Tang Cheng-Chun3; Zhu Jian-Jun1; Liu Zong-Shun1; Zhao De-Gang1; Zhang Shu-Ming1 |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2011-07-01 |
| 卷号 | 60期号:7页码:4 |
| 关键词 | Nano-led Photoluminescence (pl) Electroluminescence (el) |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhu jian-jun() |
| 英文摘要 | Gan-based led wafers with nano-folding ingan/gan multiple quantum wells (mqws) are grown on n-gan nanopillar array templates which are fabricated using self assembled. ni nanodots as etching mask. photoluminescence (pl) spectra of the wafer show uniform light emission wavelength over the whole area of it. no blue shift of the main peak is observed in the electroluminescence (el) spectra of the led devices fabricated with the wafer as the injection current increases from 10 ma to 80 ma. this can be ascribed to the reduced quantum confinement stark effect (qcse) and the resulting less band gap tilted by strain relaxation in the nano-folded mqws. the device shows an excellent rectifying behavior with a forward voltage of 4. 6 v under 20 ma injection current. |
| WOS关键词 | ARRAYS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000293366300074 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428288 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhu Jian-Jun |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China 3.Hebei Univ Technol, Key Lab New Type Funct Mat Hebei Prov, Tianjin 300130, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen Gui-Feng,Tan Xiao-Dong,Wan Wei-Tian,et al. Growth and device characteristics of nano-folding ingan/gan multiple quantum well led[J]. Acta physica sinica,2011,60(7):4. |
| APA | Chen Gui-Feng.,Tan Xiao-Dong.,Wan Wei-Tian.,Shen Jun.,Hao Qiu-Yan.,...&Zhang Shu-Ming.(2011).Growth and device characteristics of nano-folding ingan/gan multiple quantum well led.Acta physica sinica,60(7),4. |
| MLA | Chen Gui-Feng,et al."Growth and device characteristics of nano-folding ingan/gan multiple quantum well led".Acta physica sinica 60.7(2011):4. |
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来源：半导体研究所
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