Effect of antimony irradiation on inas/sb:gaas quantum dots grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Yang, Xiaoguang1; Yang, Tao1; Wang, Kefan1; Ji, Haiming1; Ni, Haiqiao2; Niu, Zhichuan2; Wang, Zhanguo1 |
| 刊名 | Semiconductor science and technology
 |
| 出版日期 | 2011-07-07 |
| 卷号 | 26期号:7页码:5 |
| ISSN号 | 0268-1242 |
| DOI | 10.1088/0268-1242/26/7/075010 |
| 通讯作者 | Yang, xiaoguang() |
| 英文摘要 | In this paper we discuss the fabrication of high-density inas quantum dots (qds) on gaas (1 0 0) substrates by molecular beam epitaxy, via antimony surfactant-mediated growth. the structural and optical properties of the qds were studied as a function of the amount of antimony irradiation. it was found that with appropriate antimony irradiation, the dot density significantly increases while simultaneously restraining giant qds. however, when the irradiation is beyond a certain amount, the dot density inversely decreases significantly. moreover, temperature-dependent photoluminescence (t-pl) measurements reveal that antimony irradiation can cause a larger redshift of the pl peak wavelength at all temperatures, a faster decrease of integrated pl intensity below 100 k and a slower decrease of integrated pl intensity within 100-300 k as compared to measurements taken in the absence of antimony irradiation. it was also found that by increasing the amount of antimony irradiation, the samples' behavior is closer to that of conventional qds. |
| WOS关键词 | HIGH-DENSITY ; TEMPERATURE-DEPENDENCE ; SELF-FORMATION ; LAYERS ; WELL ; MBE |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000289554400011 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428292 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, Xiaoguang |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Xiaoguang,Yang, Tao,Wang, Kefan,et al. Effect of antimony irradiation on inas/sb:gaas quantum dots grown by molecular beam epitaxy[J]. Semiconductor science and technology,2011,26(7):5. |
| APA | Yang, Xiaoguang.,Yang, Tao.,Wang, Kefan.,Ji, Haiming.,Ni, Haiqiao.,...&Wang, Zhanguo.(2011).Effect of antimony irradiation on inas/sb:gaas quantum dots grown by molecular beam epitaxy.Semiconductor science and technology,26(7),5. |
| MLA | Yang, Xiaoguang,et al."Effect of antimony irradiation on inas/sb:gaas quantum dots grown by molecular beam epitaxy".Semiconductor science and technology 26.7(2011):5. |
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来源：半导体研究所
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