Surface characterization of algan grown on si (111) substrates
文献类型：期刊论文
| 作者 | Pan, Xu1; Wang, Xiaoliang1,2,3; Xiao, Hongling1,2,3; Wang, Cuimei1,2,3; Feng, Chun1,2,3; Jiang, Lijuan1,2,3; Yin, Haibo1,2,3; Chen, Hong1,2,3 |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2011-09-15 |
| 卷号 | 331期号:1页码:29-32 |
| 关键词 | Island nucleation Raman scattering Si (111) substrate Algan epilayers |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2011.07.011 |
| 通讯作者 | Pan, xu(xpan@semi.ac.cn) |
| 英文摘要 | Up to 500 nm thick crack-free al0.25ga0.75n and al0.32ga0.68n epilayers have been grown on si (111) substrates. the surface morphology of samples was investigated by an optical microscope and a scanning electron microscope (sem). pits and shale-like surface structure have been observed. xrd rocking curve measurements indicate the crystal quality of samples. the analyses show that the al source flux is an important factor in growing algan on si (111). the information from the micro-raman spectra supported that al atoms are gathered at nearby areas of the pits originated from the aln/si (111) interface in the initial stage of algan growth. crown copyright (c) 2011 published by elsevier b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; FIELD-EFFECT TRANSISTORS ; VAPOR-PHASE EPITAXY ; GROUP-III NITRIDES ; INVERSION DOMAINS ; HIGH-TEMPERATURE ; GAN ; SI(111) ; ALN ; SAPPHIRE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000295067900007 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428294 |
| 专题 | 半导体研究所 |
| 通讯作者 | Pan, Xu |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing, Peoples R China |
| 推荐引用方式 GB/T 7714 | Pan, Xu,Wang, Xiaoliang,Xiao, Hongling,et al. Surface characterization of algan grown on si (111) substrates[J]. Journal of crystal growth,2011,331(1):29-32. |
| APA | Pan, Xu.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Feng, Chun.,...&Chen, Hong.(2011).Surface characterization of algan grown on si (111) substrates.Journal of crystal growth,331(1),29-32. |
| MLA | Pan, Xu,et al."Surface characterization of algan grown on si (111) substrates".Journal of crystal growth 331.1(2011):29-32. |
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来源：半导体研究所
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