Synthesis and properties of beta-ga2o3 nanostructures
文献类型:期刊论文
作者 | Wang, Jie; Zhuang, Huizhao; Zhang, Xiaokai; Zhang, Shiying; Li, Junlin |
刊名 | Vacuum
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出版日期 | 2011-02-01 |
卷号 | 85期号:8页码:802-805 |
关键词 | Beta-ga2o3 nanostructure Magnetron sputtering Annealing |
ISSN号 | 0042-207X |
DOI | 10.1016/j.vacuum.2010.12.001 |
通讯作者 | Zhuang, huizhao(wangjie830612@126.com) |
英文摘要 | A novel method was utilized to synthesize one-dimensional beta-ga2o3 nanostructures. in this method, beta-ga2o3 nanostructures have been successfully synthesized on si(111) substrates through annealing sputtered ga2o3/mo films under flowing ammonia in a quartz tube. the as-obtained samples were analyzed in detail using the methods of x-ray diffraction (xrd), scanning electron microscopy (sem), high-resolution transmission electron microscopy (hrtem) and energy dispersive x-ray spectroscopy (edx) attached to the hrtem instrument. the results show that the formed nanostructures are single-crystalline ga2o3. the annealing temperature has an evident influence on the morphology of the beta-ga2o3 nanostructures. the growth mechanism of the beta-ga2o3 nanostructures is also discussed by conventional vapor solid (vs) mechanism. (c) 2010 elsevier ltd. all rights reserved. |
WOS关键词 | GROWTH ; NANOWIRES ; PHOTOLUMINESCENCE ; NANORODS ; NANOBELTS ; MORPHOLOGY ; SURFACE ; OXIDES |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000288478000005 |
出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428301 |
专题 | 半导体研究所 |
通讯作者 | Zhuang, Huizhao |
作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Jie,Zhuang, Huizhao,Zhang, Xiaokai,et al. Synthesis and properties of beta-ga2o3 nanostructures[J]. Vacuum,2011,85(8):802-805. |
APA | Wang, Jie,Zhuang, Huizhao,Zhang, Xiaokai,Zhang, Shiying,&Li, Junlin.(2011).Synthesis and properties of beta-ga2o3 nanostructures.Vacuum,85(8),802-805. |
MLA | Wang, Jie,et al."Synthesis and properties of beta-ga2o3 nanostructures".Vacuum 85.8(2011):802-805. |
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来源:半导体研究所
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