中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Synthesis and properties of beta-ga2o3 nanostructures

文献类型:期刊论文

作者Wang, Jie; Zhuang, Huizhao; Zhang, Xiaokai; Zhang, Shiying; Li, Junlin
刊名Vacuum
出版日期2011-02-01
卷号85期号:8页码:802-805
关键词Beta-ga2o3 nanostructure Magnetron sputtering Annealing
ISSN号0042-207X
DOI10.1016/j.vacuum.2010.12.001
通讯作者Zhuang, huizhao(wangjie830612@126.com)
英文摘要A novel method was utilized to synthesize one-dimensional beta-ga2o3 nanostructures. in this method, beta-ga2o3 nanostructures have been successfully synthesized on si(111) substrates through annealing sputtered ga2o3/mo films under flowing ammonia in a quartz tube. the as-obtained samples were analyzed in detail using the methods of x-ray diffraction (xrd), scanning electron microscopy (sem), high-resolution transmission electron microscopy (hrtem) and energy dispersive x-ray spectroscopy (edx) attached to the hrtem instrument. the results show that the formed nanostructures are single-crystalline ga2o3. the annealing temperature has an evident influence on the morphology of the beta-ga2o3 nanostructures. the growth mechanism of the beta-ga2o3 nanostructures is also discussed by conventional vapor solid (vs) mechanism. (c) 2010 elsevier ltd. all rights reserved.
WOS关键词GROWTH ; NANOWIRES ; PHOTOLUMINESCENCE ; NANORODS ; NANOBELTS ; MORPHOLOGY ; SURFACE ; OXIDES
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000288478000005
出版者PERGAMON-ELSEVIER SCIENCE LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2428301
专题半导体研究所
通讯作者Zhuang, Huizhao
作者单位Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Wang, Jie,Zhuang, Huizhao,Zhang, Xiaokai,et al. Synthesis and properties of beta-ga2o3 nanostructures[J]. Vacuum,2011,85(8):802-805.
APA Wang, Jie,Zhuang, Huizhao,Zhang, Xiaokai,Zhang, Shiying,&Li, Junlin.(2011).Synthesis and properties of beta-ga2o3 nanostructures.Vacuum,85(8),802-805.
MLA Wang, Jie,et al."Synthesis and properties of beta-ga2o3 nanostructures".Vacuum 85.8(2011):802-805.

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来源:半导体研究所

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