Single neutral excitons confined in asbr3 in situ etched in gaas quantum rings
文献类型：期刊论文
| 作者 | Ding, F.1,2; Li, B.3; Akopian, N.4; Perinetti, U.4; Chen, Y. H.2; Peeters, F. M.3; Rastelli, A.1; Zwiller, V.4; Schmidt, O. G.1 |
| 刊名 | Journal of nanoelectronics and optoelectronics
 |
| 出版日期 | 2011-03-01 |
| 卷号 | 6期号:1页码:51-57 |
| 关键词 | Quantum ring Quantum dot Neutral exciton Aharonov bohm effect Gate controlled Selective etching |
| ISSN号 | 1555-130X |
| DOI | 10.1166/jno.2011.1132 |
| 通讯作者 | Ding, f.() |
| 英文摘要 | We observe the evolution of single self-assembled semiconductor quantum dots into quantum rings during asbr3 in situ etching. the direct three-dimensional imaging of in(ga)as nanostructures embedded in gaas matrix is demonstrated by selective wet chemical etching combined with atomic force microscopy. single neutral excitons confined in these quantum rings are studied by magnetophotoluminescence. oscillations in the exciton radiative recombination energy and in the emission intensity are observed under an applied magnetic field. further, we demonstrate that the period of the oscillations can be tuned by a gate potential that modifies the exciton confinement. the experimental results, combined with calculations, indicate that the exciton aharonov-bohm effect may account for the observed effects. |
| WOS关键词 | ENERGY-SPECTRA |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000290692200005 |
| 出版者 | AMER SCIENTIFIC PUBLISHERS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428306 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ding, F. |
| 作者单位 | 1.IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Univ Antwerp, Dept Fys, B-2020 Antwerp, Belgium 4.Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands |
| 推荐引用方式 GB/T 7714 | Ding, F.,Li, B.,Akopian, N.,et al. Single neutral excitons confined in asbr3 in situ etched in gaas quantum rings[J]. Journal of nanoelectronics and optoelectronics,2011,6(1):51-57. |
| APA | Ding, F..,Li, B..,Akopian, N..,Perinetti, U..,Chen, Y. H..,...&Schmidt, O. G..(2011).Single neutral excitons confined in asbr3 in situ etched in gaas quantum rings.Journal of nanoelectronics and optoelectronics,6(1),51-57. |
| MLA | Ding, F.,et al."Single neutral excitons confined in asbr3 in situ etched in gaas quantum rings".Journal of nanoelectronics and optoelectronics 6.1(2011):51-57. |
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来源：半导体研究所
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