Effect of built-in electric field in photovoltaic inas quantum dot embedded gaas solar cell
文献类型：期刊论文
| 作者 | Shang, X. J.1,2; He, J. F.1; Wang, H. L.1; Li, M. F.1; Zhu, Y.1; Niu, Z. C.1; Fu, Y.2 |
| 刊名 | Applied physics a-materials science & processing
 |
| 出版日期 | 2011-05-01 |
| 卷号 | 103期号:2页码:335-341 |
| ISSN号 | 0947-8396 |
| DOI | 10.1007/s00339-010-6152-8 |
| 通讯作者 | Shang, x. j.(xjshang@semi.ac.cn) |
| 英文摘要 | In this paper, three p-i-n gaas solar cells were grown and characterized, one with inas quantum dot (qd) layers embedded in the depletion region (sample a), one with qd layers embedded in the n (-) base region (b), and the third without qds (control sample c). qd-embedded solar cells (samples a and b) show broad photoluminescence spectra due to qd multi-level emissions but have lower open-circuit voltages v (oc) and lower photovoltaic (pv) efficiencies than sample c. on the other hand, the short-circuit current density j (sc) in sample a is increased while it is decreased in sample b. theoretical analysis shows that in sample b where the built-in electric field in qds is zero, electrons tend to occupy qds and strong potential variations exist around qds which deteriorate the electron mobility in the n (-) base region so that j (sc) in sample b is decreased. hole trapping and electron-hole recombination in qds are also enhanced in sample b, resulting in a reduced v (oc) and thus a worse pv effect. in sample a, a strong built-in field exists in qd layers, which facilitates photo-carrier extraction from qds and thus j (sc) is increased. however, qds in the depletion region in sample a act also as recombination-generation centers so that the dark saturated current density is drastically increased, which reduces v (oc) and the total pv effect. in conclusion, a nonzero built-in electric field around qds is vital for using qds to increase the pv effect in conventional p-i-n gaas solar cells. |
| WOS关键词 | INTERMEDIATE-BAND ; TRANSITIONS |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | SPRINGER |
| WOS记录号 | WOS:000289558900013 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428318 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shang, X. J. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Royal Inst Technol, Dept Theoret Chem, Sch Biotechnol, S-10691 Stockholm, Sweden |
| 推荐引用方式 GB/T 7714 | Shang, X. J.,He, J. F.,Wang, H. L.,et al. Effect of built-in electric field in photovoltaic inas quantum dot embedded gaas solar cell[J]. Applied physics a-materials science & processing,2011,103(2):335-341. |
| APA | Shang, X. J..,He, J. F..,Wang, H. L..,Li, M. F..,Zhu, Y..,...&Fu, Y..(2011).Effect of built-in electric field in photovoltaic inas quantum dot embedded gaas solar cell.Applied physics a-materials science & processing,103(2),335-341. |
| MLA | Shang, X. J.,et al."Effect of built-in electric field in photovoltaic inas quantum dot embedded gaas solar cell".Applied physics a-materials science & processing 103.2(2011):335-341. |
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来源：半导体研究所
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