Raman study of ultrathin fe3o4 films on gaas(001) substrate: stoichiometry, epitaxial orientation and strain
文献类型：期刊论文
| 作者 | Zhang, Jun; Tan, PingHeng; Zhao, WeiJie; Lu, Jun; Zhao, JianHua |
| 刊名 | Journal of raman spectroscopy
 |
| 出版日期 | 2011-06-01 |
| 卷号 | 42期号:6页码:1388-1391 |
| 关键词 | Raman spectroscopy Ultrathin fe3o4 film Crystal orientation Strain Phonon strain-shift coefficient |
| ISSN号 | 0377-0486 |
| DOI | 10.1002/jrs.2863 |
| 通讯作者 | Tan, pingheng(phtan@semi.ac.cn) |
| 英文摘要 | The growth and characterization of high-quality ultrathin fe3o4 films on semiconductor substrates is a key step for spintronic devices. a stable, single-crystalline ultrathin fe3o4 film on gaas(001) substrate is obtained by post-growth annealing of epitaxial fe film with thicknesses of 5 and 12 nm in air. raman spectroscopy shows a high ability to convincingly characterize the stoichiometry, epitaxial orientation and strain of such ultrathin fe3o4 films. polarized raman spectroscopy confirms the unit cell of fe3o4 films is rotated by 45 degrees to match that of the fe (001) layer on gaas, which results in a built-in strain of -3.5% in fe3o4 films. the phonon strain-shift coefficient(-126 cm(-1)) of the a(1g) mode is proposed to probe strain effect and strain relaxation of thin fe3o4 films on substrates. it can be used to identify whether the fe layer is fully oxidized to fe3o4 or not. copyright (c) 2011 john wiley & sons, ltd. |
| WOS关键词 | PULSED-LASER DEPOSITION ; THIN-FILMS ; SPIN-TRANSPORT ; MAGNETITE ; SEMICONDUCTORS ; SPINTRONICS ; SCATTERING ; DEVICES ; GROWTH ; SHIFTS |
| WOS研究方向 | Spectroscopy |
| WOS类目 | Spectroscopy |
| 语种 | 英语 |
| WOS记录号 | WOS:000291990300028 |
| 出版者 | WILEY-BLACKWELL |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428340 |
| 专题 | 半导体研究所 |
| 通讯作者 | Tan, PingHeng |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Jun,Tan, PingHeng,Zhao, WeiJie,et al. Raman study of ultrathin fe3o4 films on gaas(001) substrate: stoichiometry, epitaxial orientation and strain[J]. Journal of raman spectroscopy,2011,42(6):1388-1391. |
| APA | Zhang, Jun,Tan, PingHeng,Zhao, WeiJie,Lu, Jun,&Zhao, JianHua.(2011).Raman study of ultrathin fe3o4 films on gaas(001) substrate: stoichiometry, epitaxial orientation and strain.Journal of raman spectroscopy,42(6),1388-1391. |
| MLA | Zhang, Jun,et al."Raman study of ultrathin fe3o4 films on gaas(001) substrate: stoichiometry, epitaxial orientation and strain".Journal of raman spectroscopy 42.6(2011):1388-1391. |
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来源：半导体研究所
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