Detailed balance limit efficiency of silicon intermediate band solar cells
文献类型：期刊论文
| 作者 | Cao Quan; Ma Zhi-Hua; Xue Chun-Lai; Zuo Yu-Hua; Wang Qi-Ming |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2011-09-01 |
| 卷号 | 20期号:9页码:5 |
| 关键词 | Intermediate band Silicon solar cell Concentrated light Detailed balance principle |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/20/9/097103 |
| 通讯作者 | Zuo yu-hua(yhzuo@semi.ac.cn) |
| 英文摘要 | The detailed balance method is used to study the potential of the intermediate band solar cell (ibsc), which can improve the efficiency of the si-based solar cell with a bandgap between 1.1 ev to 1.7 ev. it shows that a crystalline silicon solar cell with an intermediate band located at 0.36 ev below the conduction band or above the valence band can reach a limiting efficiency of 54% at the maximum light concentration, improving greatly than 40.7% of the shockley-queisser limit for the single junction si solar cell. the simulation also shows that the limiting efficiency of the silicon-based solar cell increases as the bandgap increases from 1.1 ev to 1.7 ev, and the amorphous si solar cell with a bandgap of 1.7 ev exhibits a radiative limiting efficiency of 62.47%, having a better potential. |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000295964200057 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428341 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zuo Yu-Hua |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cao Quan,Ma Zhi-Hua,Xue Chun-Lai,et al. Detailed balance limit efficiency of silicon intermediate band solar cells[J]. Chinese physics b,2011,20(9):5. |
| APA | Cao Quan,Ma Zhi-Hua,Xue Chun-Lai,Zuo Yu-Hua,&Wang Qi-Ming.(2011).Detailed balance limit efficiency of silicon intermediate band solar cells.Chinese physics b,20(9),5. |
| MLA | Cao Quan,et al."Detailed balance limit efficiency of silicon intermediate band solar cells".Chinese physics b 20.9(2011):5. |
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来源：半导体研究所
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