The explanation of inn bandgap discrepancy based on experiments and first-principle calculations
文献类型:期刊论文
作者 | Liu, Chaoren; Li, Jingbo |
刊名 | Physics letters a
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出版日期 | 2011-02-14 |
卷号 | 375期号:7页码:1152-1155 |
关键词 | First principle calculation Indium nitride Band gap Defect |
ISSN号 | 0375-9601 |
DOI | 10.1016/j.physleta.2011.01.024 |
通讯作者 | Liu, chaoren(supermanliu5@semi.ac.cn) |
英文摘要 | Indium nitride (inn) films with different free electron concentration and optical bandgap were grown either directly on sapphire substrate or on pre-covered gallium nitride (gan) buffer through metal-organic chemical vapor deposition (mocvd) method. based on first-principle calculations, we confirm that the widening of inn optical bandgap reported before is caused by high density of free electrons. to find the contributor of the free electrons, the characteristic energetic levels of o(n), v(n) and si(in) are investigated. we find that they are all high enough to uplift the optical bandgap from about 0.78 ev to 1.9 ev, which almost can't be enlarged further when it reaches 2.09 ev. (c) 2011 elsevier b.v. all rights reserved. |
WOS关键词 | INITIO MOLECULAR-DYNAMICS ; AUGMENTED-WAVE METHOD ; INDIUM NITRIDE ; GAP ; PSEUDOPOTENTIALS ; SEMICONDUCTORS ; IMPURITIES ; ABSORPTION ; DEFECTS ; ALLOYS |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000287344800018 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428362 |
专题 | 半导体研究所 |
通讯作者 | Liu, Chaoren |
作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, Chaoren,Li, Jingbo. The explanation of inn bandgap discrepancy based on experiments and first-principle calculations[J]. Physics letters a,2011,375(7):1152-1155. |
APA | Liu, Chaoren,&Li, Jingbo.(2011).The explanation of inn bandgap discrepancy based on experiments and first-principle calculations.Physics letters a,375(7),1152-1155. |
MLA | Liu, Chaoren,et al."The explanation of inn bandgap discrepancy based on experiments and first-principle calculations".Physics letters a 375.7(2011):1152-1155. |
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来源:半导体研究所
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