High-performance metamorphic ingaas resonant cavity enhanced photodetector grown on gaas substrate
文献类型：期刊论文
| 作者 | Liu, S. Q.1; Han, Q.1; Zhu, B.1; Yang, X. H.1; Ni, H. Q.2; He, J. F.2; Wang, X.1; Li, M. F.2; Zhu, Y.2; Wang, J.1 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2011-05-16 |
| 卷号 | 98期号:20页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3592569 |
| 通讯作者 | Liu, s. q.(sqliu@semi.ac.cn) |
| 英文摘要 | In this letter, we demonstrated a top illuminated 1.55 mu m metamorphic ingaas resonant-cavity-enhanced p-i-n photodetector grown on gaas substrate. the photodetectors were grown by a solid-source molecular beam epitaxy system. the high quality linearly graded inxal0.4ga1-x-0.4as metamorphic buffer layer enabled photodiodes to achieve ultralow dark current densities of 2.3 x 10(-6) a/cm(2) at 0 v and 4.2 x 10(-5) a/cm(2) at a reverse bias of 5 v. a high quantum efficiency of 84.4% at resonant wavelength of 1542 nm, a full width at half maximum about 14 nm, and a -3 db bandwidth up to 13 ghz were also obtained. (c) 2011 american institute of physics. [doi:10.1063/1.3592569] |
| WOS关键词 | I-N PHOTODIODES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000290812100004 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428364 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, S. Q. |
| 作者单位 | 1.Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, S. Q.,Han, Q.,Zhu, B.,et al. High-performance metamorphic ingaas resonant cavity enhanced photodetector grown on gaas substrate[J]. Applied physics letters,2011,98(20):3. |
| APA | Liu, S. Q..,Han, Q..,Zhu, B..,Yang, X. H..,Ni, H. Q..,...&Niu, Z. C..(2011).High-performance metamorphic ingaas resonant cavity enhanced photodetector grown on gaas substrate.Applied physics letters,98(20),3. |
| MLA | Liu, S. Q.,et al."High-performance metamorphic ingaas resonant cavity enhanced photodetector grown on gaas substrate".Applied physics letters 98.20(2011):3. |
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来源：半导体研究所
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