Gesn p-i-n photodetector for all telecommunication bands detection
文献类型：期刊论文
| 作者 | Su, Shaojian; Cheng, Buwen; Xue, Chunlai; Wang, Wei; Cao, Quan; Xue, Haiyun; Hu, Weixuan; Zhang, Guangze; Zuo, Yuhua; Wang, Qiming |
| 刊名 | Optics express
 |
| 出版日期 | 2011-03-28 |
| 卷号 | 19期号:7页码:6408-6413 |
| ISSN号 | 1094-4087 |
| DOI | 10.1364/oe.19.006408 |
| 通讯作者 | Su, shaojian() |
| 英文摘要 | Using a 820 nm-thick high-quality ge0.97sn0.03 alloy film grown on si(001) by molecular beam epitaxy, gesn p-i-n photodectectors have been fabricated. the detectors have relatively high responsivities, such as 0.52 a/w, 0.23 a/w, and 0.12 a/w at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 v reverse bias. with a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (cmos) technology, the gesn devices are attractive for applications in both optical communications and optical interconnects. (c) 2011 optical society of america |
| WOS关键词 | HIGH-PERFORMANCE ; SEMICONDUCTORS ; SILICON |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| 出版者 | OPTICAL SOC AMER |
| WOS记录号 | WOS:000288852700073 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428365 |
| 专题 | 半导体研究所 |
| 通讯作者 | Su, Shaojian |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Su, Shaojian,Cheng, Buwen,Xue, Chunlai,et al. Gesn p-i-n photodetector for all telecommunication bands detection[J]. Optics express,2011,19(7):6408-6413. |
| APA | Su, Shaojian.,Cheng, Buwen.,Xue, Chunlai.,Wang, Wei.,Cao, Quan.,...&Wang, Qiming.(2011).Gesn p-i-n photodetector for all telecommunication bands detection.Optics express,19(7),6408-6413. |
| MLA | Su, Shaojian,et al."Gesn p-i-n photodetector for all telecommunication bands detection".Optics express 19.7(2011):6408-6413. |
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来源：半导体研究所
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