Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation
文献类型：期刊论文
| 作者 | Zhou, Huiying1,2,3; Qu, Shengchun1; Jin, Peng1; Xu, Bo1; Ye, Xiaoling1; Liu, Junpeng1; Wang, Zhanguo1 |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2011-03-01 |
| 卷号 | 318期号:1页码:572-575 |
| 关键词 | Atom force microscopy Nanostructures Molecular-beam epitaxy Nanomaterials Semiconducting gallium arsenide |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2010.10.176 |
| 通讯作者 | Qu, shengchun(qsc@semi.ac) |
| 英文摘要 | Ordered in(ga)as nanostructures on gaas are emerging as an important new class of optoelectronic and electronic materials. in this work, patterned gaas (1 0 0) substrates were fabricated by masked indium ion implantation and subsequent annealing under arsenic capping. anodic aluminum oxide templates are used as masks for indium ion implantation on gaas substrate. the masked indium ion implantation substrate is used as a strain pattern for the nucleation of three-dimensional in(ga)as islands on the gaas substrate. molecular-beam epitaxy growth of self-assembled in(ga)as/gaas quantum dots on the patterned gaas (1 0 0) substrates has been studied. by adjusting the growth conditions, surprising alignment and pronounced round coalescence of dots under specific condition are realized. an explanation for the role of patterned substrate in determining the shape of the nanostructure is proposed. our approach provides a general yet versatile route towards the creation of a range of nanostructure materials. (c) 2010 elsevier b.v. all rights reserved. |
| WOS关键词 | QUANTUM-DOTS ; ANODIC ALUMINA ; ARRAYS ; PLACEMENT ; INAS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000289653900121 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428371 |
| 专题 | 半导体研究所 |
| 通讯作者 | Qu, Shengchun |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Cent S Univ Forestry & Technol, Comp & Informat Engn Sch, Changsha 410004, Hunan, Peoples R China 3.Hunan Normal Univ, Dept Phys, Minist Educ, Key Lab Low Dimens Quantum Struct & Quantum Contr, Changsha 410081, Hunan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Huiying,Qu, Shengchun,Jin, Peng,et al. Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation[J]. Journal of crystal growth,2011,318(1):572-575. |
| APA | Zhou, Huiying.,Qu, Shengchun.,Jin, Peng.,Xu, Bo.,Ye, Xiaoling.,...&Wang, Zhanguo.(2011).Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation.Journal of crystal growth,318(1),572-575. |
| MLA | Zhou, Huiying,et al."Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation".Journal of crystal growth 318.1(2011):572-575. |
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来源：半导体研究所
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