Metal electrode influence on the wet selective etching of gaas/algaas
文献类型：期刊论文
| 作者 | Wang Jie1; Han Qin1; Yang Xiao-Hong1; Wang Xiu-Ping1; Ni Hai-Qiao2; He Ji-Fang2 |
| 刊名 | Journal of vacuum science & technology b
 |
| 出版日期 | 2011-07-01 |
| 卷号 | 29期号:4页码:4 |
| 关键词 | Aluminium compounds Chromium alloys Copper alloys Electrochemical analysis Electrochemical electrodes Etching Gallium arsenide Gold alloys Iii-v semiconductors Metallic thin films Titanium alloys |
| ISSN号 | 1071-1023 |
| DOI | 10.1116/1.3610969 |
| 通讯作者 | Wang jie() |
| 英文摘要 | Metal electrodes were found to influence the wet selective etching of gaas in a citric acid/hydrogen peroxide solution. the authors found that metal films such as a cr/au or ti/au alloy deposited on a semiconductor surface can mostly prevent the etching of gaas. the gaas sacrificial material that was exposed to the selective etchant near the metal electrode was not removed at all. contrast experiments show that it can be removed selectively if no metal is present on the surface or if the gaas is located far enough from the metal. electrochemical analyses were undertaken to determine the passivation mechanism. (c) 2011 american vacuum society. [doi: 10.1116/1.3610969] |
| WOS关键词 | HYDROGEN-PEROXIDE SOLUTIONS ; III-V SEMICONDUCTORS ; PSEUDOMORPHIC MODFETS ; GAAS ; FABRICATION ; TRANSISTOR ; ALGAAS |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000293854800017 |
| 出版者 | A V S AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428376 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Jie,Han Qin,Yang Xiao-Hong,et al. Metal electrode influence on the wet selective etching of gaas/algaas[J]. Journal of vacuum science & technology b,2011,29(4):4. |
| APA | Wang Jie,Han Qin,Yang Xiao-Hong,Wang Xiu-Ping,Ni Hai-Qiao,&He Ji-Fang.(2011).Metal electrode influence on the wet selective etching of gaas/algaas.Journal of vacuum science & technology b,29(4),4. |
| MLA | Wang Jie,et al."Metal electrode influence on the wet selective etching of gaas/algaas".Journal of vacuum science & technology b 29.4(2011):4. |
入库方式： iSwitch采集
来源：半导体研究所
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