Microstructure and electrical properties of y(no3)(3)center dot 6h(2)o-doped zno-bi2o3-based varistor ceramics
文献类型：期刊论文
| 作者 | Xu, Dong1,2,3; Cheng, Xiaonong1; Yuan, Hongming4; Yang, Juan1; Lin, Yuanhua5 |
| 刊名 | Journal of alloys and compounds
 |
| 出版日期 | 2011-09-22 |
| 卷号 | 509期号:38页码:9312-9317 |
| ISSN号 | 0925-8388 |
| 关键词 | Ceramics Varistors Rare earth alloys and compounds Microstructure Electrical properties |
| DOI | 10.1016/j.jallcom.2011.07.015 |
| 通讯作者 | Xu, dong(frank@ujs.edu.cn) |
| 英文摘要 | Y(no3)center dot 6h(2)o-doped zno-bi2o3-based varistor ceramics were prepared using a solid reaction route. the microstructure, electrical properties, degradation coefficient (d-v), and dielectric characteristics of varistor ceramics were studied in this paper. with increasing amounts of y(no3)(3)center dot 6h(2)o in the starting composition, y-containing bi-rich, y2o3, and sb2o4 phases were formed, and the average grain size decreased. results also showed that with the addition of 0.16 mol% y(no3)(3)center dot 6h(2)o, y(no3)(3)center dot 6h(2)o-doped zno-based varistor ceramics exhibit comparatively better comprehensive electrical properties, such as a threshold voltage of 425 v/mm, a nonlinear coefficient of 73.9, a leakage current of 1.78 mu a, and a degradation coefficient of 1.7. the dielectric characteristics and lightning surge test also received the same additional content of y(no3)(3)center dot 6h(2)o. the results confirmed that doping with rare earth nitrates instead of rare earth oxides is very promising route in preparing high-performance zno-bi2o3-based varistor ceramics. (c) 2011 elsevier b. v. all rights reserved. |
| WOS关键词 | ZNO-BASED VARISTORS ; ZNO-PR6O11-BASED VARISTORS ; SINTERING TEMPERATURE ; DIELECTRIC-PROPERTIES ; BI2O3 VAPORIZATION ; RELEVANT PARAMETER ; COOLING RATE ; STABILITY ; VOLTAGE ; OXIDE |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE SA |
| WOS记录号 | WOS:000294004700010 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428382 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, Dong |
| 作者单位 | 1.Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China 4.Jilin Univ, Coll Chem, State Key Lab Inorgan Synth & Preparat Chem, Changchun 130012, Peoples R China 5.Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, Dong,Cheng, Xiaonong,Yuan, Hongming,et al. Microstructure and electrical properties of y(no3)(3)center dot 6h(2)o-doped zno-bi2o3-based varistor ceramics[J]. Journal of alloys and compounds,2011,509(38):9312-9317. |
| APA | Xu, Dong,Cheng, Xiaonong,Yuan, Hongming,Yang, Juan,&Lin, Yuanhua.(2011).Microstructure and electrical properties of y(no3)(3)center dot 6h(2)o-doped zno-bi2o3-based varistor ceramics.Journal of alloys and compounds,509(38),9312-9317. |
| MLA | Xu, Dong,et al."Microstructure and electrical properties of y(no3)(3)center dot 6h(2)o-doped zno-bi2o3-based varistor ceramics".Journal of alloys and compounds 509.38(2011):9312-9317. |
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来源：半导体研究所
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