Characteristics of undoped and sb-doped zno thin films prepared in different atmospheres by pulsed laser deposition
文献类型：期刊论文
| 作者 | Zhu, B. L.1; Zhu, S. J.1; Zhao, X. Z.2; Su, F. H.3; Li, G. H.3; Wu, X. G.3; Wu, J.1 |
| 刊名 | Physica status solidi a-applications and materials science
 |
| 出版日期 | 2011-04-01 |
| 卷号 | 208期号:4页码:843-850 |
| 关键词 | Conductivity Doping Photoluminescence Pulsed laser deposition Zno |
| ISSN号 | 1862-6300 |
| DOI | 10.1002/pssa.201026626 |
| 通讯作者 | Zhu, b. l.(zhubailin97@hotmail.com) |
| 英文摘要 | Undoped and 0.56 at.% sb-doped zno thin films were prepared by pulsed laser deposition (pld) under vacuum and an oxygen pressure of 0.2 pa with sintered ceramic as targets. the effects of sb doping and deposition atmosphere on structure and optical-electrical properties of the films were studied by x-ray diffraction (xrd), scanning probe microscopy (spm), hall effect measurement, transmittance spectra, and photoluminescence (pl) spectra. the results showed that undoped and sb-doped films deposited under vacuum had better crystallinity, higher carrier concentration, lower bandgap (e-g), and single violet emission as compared with the films deposited in an oxygen pressure of 0.2 pa. compared with undoped zno film, sb-doped zno film had higher carrier concentration and almost uniform e-g in both atmospheres, and it exhibited obviously improved crystallinity and green emission under an oxygen pressure of 0.2 pa. the results implied that the deposition atmosphere strongly affected the growth kinetics of the films and intrinsic defect in the films, and sb doping seemed also to affect the growth kinetics of the films under certain conditions and introduced sb-zn defects and possibly sb-zn-2v(zn) defects, thus the structure and optical-electrical properties of the films were modified by the deposition atmosphere and sb doping. (c) 2011 wiley-vch verlag gmbh & co. kgaa, weinheim |
| WOS关键词 | ZINC-OXIDE ; ELECTRICAL-PROPERTIES ; OPTICAL-PROPERTIES ; OXYGEN-PRESSURE ; PHOTOLUMINESCENCE ; LUMINESCENCE ; VIOLET ; GROWTH ; FABRICATION ; DEPENDENCE |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000289513700016 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428390 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhu, B. L. |
| 作者单位 | 1.Wuhan Univ Sci & Technol, Minist Educ, Key Lab Ferrous Met & Resources Utilizat, Wuhan 430081, Peoples R China 2.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu, B. L.,Zhu, S. J.,Zhao, X. Z.,et al. Characteristics of undoped and sb-doped zno thin films prepared in different atmospheres by pulsed laser deposition[J]. Physica status solidi a-applications and materials science,2011,208(4):843-850. |
| APA | Zhu, B. L..,Zhu, S. J..,Zhao, X. Z..,Su, F. H..,Li, G. H..,...&Wu, J..(2011).Characteristics of undoped and sb-doped zno thin films prepared in different atmospheres by pulsed laser deposition.Physica status solidi a-applications and materials science,208(4),843-850. |
| MLA | Zhu, B. L.,et al."Characteristics of undoped and sb-doped zno thin films prepared in different atmospheres by pulsed laser deposition".Physica status solidi a-applications and materials science 208.4(2011):843-850. |
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来源：半导体研究所
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