Molecular beam epitaxy growth of gaas on an offcut ge substrate
文献类型：期刊论文
| 作者 | He Ji-Fang; Niu Zhi-Chuan; Chang Xiu-Ying; Ni Hai-Qiao; Zhu Yan; Li Mi-Feng; Shang Xiang-Jun |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2011 |
| 卷号 | 20期号:1页码:6 |
| 关键词 | Molecular beam epitaxy Anti-phase domain Gaas/ge interface |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/20/1/018102 |
| 通讯作者 | Niu zhi-chuan(zcniu@semi.ac.cn) |
| 英文摘要 | Molecular beam epitaxy growth of gaas on an offcut ge(100) substrate has been systemically investigated. a high quality gaas/ge interface and gaas film on ge have been achieved. high temperature annealing before gaas deposition is found to be indispensable to avoid anti-phase domains. the quality of the gaas film is found to strongly depend on the gaas/ge interface and the beginning of gaas deposition. the reason why both high temperature annealing and gaas growth temperature can affect epitaxial gaas film quality is discussed. high quality in0.17ga0.83as/gaas strained quantum wells have also been achieved on a ge substrate. samples show at surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a gaas substrate. these results indicate a large application potential for iii-v compound semiconductor optoelectronic devices on ge substrates. |
| WOS关键词 | CHEMICAL VAPOR-DEPOSITION ; JUNCTION SOLAR-CELLS ; DOMAIN-FREE GROWTH ; TEMPERATURE ; QUALITY ; FUTURE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000286676000098 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428399 |
| 专题 | 半导体研究所 |
| 通讯作者 | Niu Zhi-Chuan |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | He Ji-Fang,Niu Zhi-Chuan,Chang Xiu-Ying,et al. Molecular beam epitaxy growth of gaas on an offcut ge substrate[J]. Chinese physics b,2011,20(1):6. |
| APA | He Ji-Fang.,Niu Zhi-Chuan.,Chang Xiu-Ying.,Ni Hai-Qiao.,Zhu Yan.,...&Shang Xiang-Jun.(2011).Molecular beam epitaxy growth of gaas on an offcut ge substrate.Chinese physics b,20(1),6. |
| MLA | He Ji-Fang,et al."Molecular beam epitaxy growth of gaas on an offcut ge substrate".Chinese physics b 20.1(2011):6. |
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来源：半导体研究所
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