Optimized growth of p-type algan electron blocking layer in the gan-based led
文献类型：期刊论文
| 作者 | Wang Bing; Li Zhi-Cong; Yao Ran; Liang Meng; Yan Fa-Wang; Wang Guo-Hong |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2011 |
| 卷号 | 60期号:1页码:6 |
| 关键词 | Gan-based Led Al composition Electron blocking layer |
| ISSN号 | 1000-3290 |
| 通讯作者 | Wang bing(wangbing@semi.ac.cn) |
| 英文摘要 | In the high-power ingan/gan-based led structures, p-algan layer plays a role as electron blocking layer. in this paper, gan/ingan-based led have been grown on sapphire by metal organic chemical vapor deposition (mocvd), and the p-type doping mechanism and structural optimization of algan layer were studied. the ways to change algan components have been discussed. we found that the growth temperature, growth pressure and flow tmal (mole ratio) have strong effect on the al components through different mechanisms. in the algan electron blocking layer, the al composition is between 10%-30% and the electron could be well limited to the quantum well region, maintaining a high quality crystal material. the p-type doping efficiency of algan layer is low, and there is a magnesium droop problem due to lack of hole injection. a new growth method is suggestece to solve the problem. grown under optimal conditions, the p-type algan inserted in a led structure greatly improves the output optical power of led device. |
| WOS关键词 | TEMPERATURE ; MOVPE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000287419100072 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428401 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang Bing |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lighting R&D Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Bing,Li Zhi-Cong,Yao Ran,et al. Optimized growth of p-type algan electron blocking layer in the gan-based led[J]. Acta physica sinica,2011,60(1):6. |
| APA | Wang Bing,Li Zhi-Cong,Yao Ran,Liang Meng,Yan Fa-Wang,&Wang Guo-Hong.(2011).Optimized growth of p-type algan electron blocking layer in the gan-based led.Acta physica sinica,60(1),6. |
| MLA | Wang Bing,et al."Optimized growth of p-type algan electron blocking layer in the gan-based led".Acta physica sinica 60.1(2011):6. |
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来源：半导体研究所
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