Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material
文献类型：期刊论文
| 作者 | Ma Zhi-Hua; Cao Quan; Zuo Yu-Hua; Zheng Jun; Xue Chun-Lai; Cheng Bu-Wen; Wang Qi-Ming |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2011-10-01 |
| 卷号 | 20期号:10页码:4 |
| 关键词 | Infrared response Ion implantation Rapid thermal annealing Intermediate band solar cell |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/20/10/106104 |
| 通讯作者 | Zuo yu-hua(yhzuo@semi.ac.cn) |
| 英文摘要 | The intermediate band (ib) solar cell is a promising third-generation solar cell that could possibly achieve very high efficiency above the shockley-queisser limit. one of the promising ways to synthesize ib material is to introduce heavily doped deep level impurities in conventional semiconductors. high-doped ti with a concentration of 10(20) cm (3)-10(21) cm(-3) in the p-type top si layer of silicon-on-insulator (soi) substrate is obtained by ion implantation and rapid thermal annealing (rta). secondary ion mass spectrometry measurements confirm that the ti concentration exceeds the theoretical mott limit, the main requirement for the formation of an impurity intermediate band. increased absorption is observed in the infrared (ir) region by fourier transform infrared spectroscopy (ftir) technology. by using a lateral p-i-n structure, an obvious infrared response in a range of 1100 nm-2000 nm is achieved in a heavily ti-doped soi substrate, suggesting that the improvement on ir photoresponse is a result of increased absorption in the ir. the experimental results indicate that heavily ti-implanted si can be used as a potential kind of intermediate-band photovoltaic material to utilize the infrared photons of the solar spectrum. |
| WOS关键词 | PHOTODIODE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000295969000053 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428403 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zuo Yu-Hua |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ma Zhi-Hua,Cao Quan,Zuo Yu-Hua,et al. Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material[J]. Chinese physics b,2011,20(10):4. |
| APA | Ma Zhi-Hua.,Cao Quan.,Zuo Yu-Hua.,Zheng Jun.,Xue Chun-Lai.,...&Wang Qi-Ming.(2011).Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material.Chinese physics b,20(10),4. |
| MLA | Ma Zhi-Hua,et al."Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material".Chinese physics b 20.10(2011):4. |
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来源：半导体研究所
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