Wavelength-tunable si-based ingaas resonant cavity enhanced photodetectors using sol-gel wafer bonding technology
文献类型：期刊论文
| 作者 | Zhang, Lingzi; Cao, Quan; Zuo, Yuhua; Xue, Chunlai; Cheng, Buwen; Wang, Qiming |
| 刊名 | Ieee photonics technology letters
 |
| 出版日期 | 2011-07-01 |
| 卷号 | 23期号:13页码:881-883 |
| 关键词 | Resonant cavity enhanced (rce) photodetector Silicon photonics Sol-gel wafer bonding Thermal tuning |
| ISSN号 | 1041-1135 |
| DOI | 10.1109/lpt.2011.2141980 |
| 通讯作者 | Zhang, lingzi(zhang.labs@gmail.com) |
| 英文摘要 | We report resonant cavity enhanced (rce) ingaas/si photodetectors fabricated by sol-gel wafer bonding technology. the bonding temperature was 300 degrees c. a 60-mu m-diameter photodetector demonstrated dark current density of 0.59 pa/mu m(2) at 0-v bias and 24.7 pa/mu m(2) at 2-v reverse bias, peak responsivity of 0.7 a/w, and full-width at half-maximum (fwhm) of 6 nm around 1.55 mu m. the 3-db bandwidth of a 20-mu m-diameter photodetector was 17.05 ghz under 1-v reverse bias voltage. red shift of the resonant wavelength caused by thermo-optic effect was observed. the thermal tuning range achieved 15 nm. |
| WOS关键词 | INTERFACIAL ENERGY ; SILICON-WAFERS ; HIGH-SPEED ; TEMPERATURE ; PHOTODIODES ; MORPHOLOGY ; POWER |
| WOS研究方向 | Engineering ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000291355000009 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428407 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, Lingzi |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Lingzi,Cao, Quan,Zuo, Yuhua,et al. Wavelength-tunable si-based ingaas resonant cavity enhanced photodetectors using sol-gel wafer bonding technology[J]. Ieee photonics technology letters,2011,23(13):881-883. |
| APA | Zhang, Lingzi,Cao, Quan,Zuo, Yuhua,Xue, Chunlai,Cheng, Buwen,&Wang, Qiming.(2011).Wavelength-tunable si-based ingaas resonant cavity enhanced photodetectors using sol-gel wafer bonding technology.Ieee photonics technology letters,23(13),881-883. |
| MLA | Zhang, Lingzi,et al."Wavelength-tunable si-based ingaas resonant cavity enhanced photodetectors using sol-gel wafer bonding technology".Ieee photonics technology letters 23.13(2011):881-883. |
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来源：半导体研究所
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