Optically induced current oscillation in a modulation-doped field-effect transistor embedded with inas quantum dots
文献类型：期刊论文
| 作者 | Li, Y. Q.1; Wang, X. D.1; Xu, X. N.1; Liu, W.1; Yang, F. H.1; Zeng, Y. P.2 |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2011-12-01 |
| 卷号 | 44期号:3页码:686-689 |
| 关键词 | Quantum dots Modulation-doped Field-effect transistors Output characteristics |
| ISSN号 | 1386-9477 |
| DOI | 10.1016/j.physe.2011.11.009 |
| 通讯作者 | Wang, x. d.(xdwang@semi.ac.cn) |
| 英文摘要 | The output characteristics of a modulation-doped gaas/algaas field-effect transistor with inas quantum dots (qds) embedded in the barrier layer (qdfet) have been studied at low temperature. optically induced current oscillation in the output current-voltage (i-v) curves has been found under the near-infrared light illumination. it is ascribed to the recombination of real space transferred electrons and photoexcited holes captured by the qds. furthermore, inas qds layer can also capture electrons and act as a nano-floating gate, which causes a bistability in the two-dimensional electron gas (2deg) conductance. our results suggest that the qdfet is a promising candidate for developing phototransistor or logic circuits. (c) 2011 elsevier b.v. all rights reserved. |
| WOS关键词 | SINGLE-PHOTON DETECTION ; PERSISTENT PHOTOCONDUCTIVITY ; LAYERS |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000300133600024 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428408 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, X. D. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Y. Q.,Wang, X. D.,Xu, X. N.,et al. Optically induced current oscillation in a modulation-doped field-effect transistor embedded with inas quantum dots[J]. Physica e-low-dimensional systems & nanostructures,2011,44(3):686-689. |
| APA | Li, Y. Q.,Wang, X. D.,Xu, X. N.,Liu, W.,Yang, F. H.,&Zeng, Y. P..(2011).Optically induced current oscillation in a modulation-doped field-effect transistor embedded with inas quantum dots.Physica e-low-dimensional systems & nanostructures,44(3),686-689. |
| MLA | Li, Y. Q.,et al."Optically induced current oscillation in a modulation-doped field-effect transistor embedded with inas quantum dots".Physica e-low-dimensional systems & nanostructures 44.3(2011):686-689. |
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来源：半导体研究所
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