The effect of different oriented sapphire substrates on the growth of polar and non-polar znmgo by mocvd
文献类型：期刊论文
| 作者 | Shi, K.; Yang, A. L.; Wang, J.; Song, H. P.; Xu, X. Q.; Sang, L.; Wei, H. Y.; Yang, S. Y.; Liu, X. L.; Zhu, Q. S. |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2011 |
| 卷号 | 314期号:1页码:39-42 |
| 关键词 | Metal organic chemical vapor deposition Sapphire Zinc compounds Semiconducting ii-vi materials |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2010.11.095 |
| 通讯作者 | Shi, k.(shikai@semi.ac.cn) |
| 英文摘要 | Polar and non-polar znmgo were synthesized on different crystallographic planes (c-, r- and m-planes) of sapphire (al(2)o(3)) substrates by metal organic chemical vapor deposition, respectively. under the same experimental condition, polar znmgo nanorods were obtained on c-al(2)o(3) substrate whereas non-polar znmgo thin films were obtained on r- and m-al(2)o(3) substrates. the surface morphology was significantly influenced by the competition of the preferable growth directions on different sapphire substrates. on c-al(2)o(3) substrate, znmgo nanorods were vertically well-aligned with typical lengths in the range 330-360 nm. on r- and m-al(2)o(3) substrates, however, znmgo thin films with flat surfaces were obtained, whose thickness were 150 and 20 nm, respectively. under the same condition, the c-znmgo deposited on c-al(2)o(3) substrate has the maximum growth velocity (11 nm/nim), followed by a-znmgo deposited on r-al(2)o(3) substrate (5 nm/min), and the m-znmgo deposited on m-al(2)o(3) substrate has the minimum one (0.67 nm/min). the near-band-edge (nbe) emission in photoluminescence (pl) spectra shows a clear blueshift and a slight broadening compared with that of pure zno samples, which suggest that the mg content has successfully incorporated into zno. the different energy blueshifts (67 mev and 98 mev) of the nbe emission demonstrate that a-znmgo deposited on r-al(2)o(3) substrate has higher mg incorporation efficiency than c-znmgo on c-al(2)o(3) substrate. (c) 2010 elsevier b.v. all rights reserved. |
| WOS关键词 | VAPOR-PHASE EPITAXY ; OPTICAL-PROPERTIES ; ZNO NANORODS ; RAMAN-SCATTERING ; M-PLANE ; FILMS ; PHOTOLUMINESCENCE ; DEPOSITION ; NANOWIRES ; FIELDS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000286853400008 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428409 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shi, K. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shi, K.,Yang, A. L.,Wang, J.,et al. The effect of different oriented sapphire substrates on the growth of polar and non-polar znmgo by mocvd[J]. Journal of crystal growth,2011,314(1):39-42. |
| APA | Shi, K..,Yang, A. L..,Wang, J..,Song, H. P..,Xu, X. Q..,...&Wang, Z. G..(2011).The effect of different oriented sapphire substrates on the growth of polar and non-polar znmgo by mocvd.Journal of crystal growth,314(1),39-42. |
| MLA | Shi, K.,et al."The effect of different oriented sapphire substrates on the growth of polar and non-polar znmgo by mocvd".Journal of crystal growth 314.1(2011):39-42. |
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来源：半导体研究所
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